Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions

Hiroyoshi Itoh; Syuta Honda; Junichiro Inoue

doi:10.4028/www.scientific.net/KEM.470.54

Paper Titles

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Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
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Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions
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First-Principles Calculations of the Dielectric Constant for the GeO₂ Films
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Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Electronic Structure and Spin-Injection of...

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions

Abstract:

The electronic structures of Co-based Heusler alloys with nonstoichiometric atomic compositions as well as those at the interface of semiconductor junctions are investigated using first principles band calculations. It is shown that the electronic structure of a Co-based Heusler alloy is half-metallic, even for nonstoichiometric but Co-rich compositions, whereas the half-metallicity is lost for Co-poor compositions. It is also shown that magnetic moments at the interface of Co2MnSi/ Si junctions are sensitive to the growth direction and interface structure of the junctions. Efficient spin-injection into Si can be achieved by using a (111)-oriented Co-rich Heusler alloy and controlling the layer-by-layer stacking sequence at the interface.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

54-59

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.54

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Online since:

February 2011

Authors:

Hiroyoshi Itoh, Syuta Honda, Junichiro Inoue

Keywords:

Electronic Structure, First-Principle Calculations, Half Metal, Heusler Alloy, Spin Injection

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