Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact

Abstract:

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Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.

Info:

Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

43-47

DOI:

10.4028/www.scientific.net/KEM.470.43

Citation:

Y. Takada et al., "Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact", Key Engineering Materials, Vol. 470, pp. 43-47, 2011

Online since:

February 2011

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Price:

$35.00

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