Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact

Yukihiro Takada; Masakazu Muraguchi; Tetsuo Endoh; Shintaro Nomura; Kenji Shiraishi

doi:10.4028/www.scientific.net/KEM.470.43

Paper Titles

Functional Device Applications of Nanosilicon
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Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
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KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
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Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
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Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
p.43

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
p.48

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions
p.54

First-Principles Calculations of the Dielectric Constant for the GeO₂ Films
p.60

Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory
p.66

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Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact

Abstract:

Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain contacts. In this study, we investigate the I-V characteristics using a varying discrete level distribution based on our previously-proposed model. Our calculated results show that linear I-V properties can be obtained from uniform discrete level distributions.