Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOI) samples. Thickness dependence of a free exciton (FE) PL and an electron-hole droplet (EHD) PL has been investigated. We have found a remarkable enhancement of an EHD PL with decrease in the thickness of SOI samples.
Seiichi Miyazaki and Hitoshi Tabata
Y. Sakurai et al., "Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures", Key Engineering Materials, Vol. 470, pp. 39-42, 2011