Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures

Yoko Sakurai; Shintaro Nomura; Kenji Shiraishi; Kenji Ohmori; Keisaku Yamada

doi:10.4028/www.scientific.net/KEM.470.39

Paper Titles

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
p.14

Functional Device Applications of Nanosilicon
p.20

Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
p.27

KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
p.33

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
p.39

Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
p.43

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
p.48

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions
p.54

First-Principles Calculations of the Dielectric Constant for the GeO₂ Films
p.60

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Photoluminescence Characteristics of Ultra-Thin...

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures

Abstract:

We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOI) samples. Thickness dependence of a free exciton (FE) PL and an electron-hole droplet (EHD) PL has been investigated. We have found a remarkable enhancement of an EHD PL with decrease in the thickness of SOI samples.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

39-42

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.39

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Online since:

February 2011

Authors:

Yoko Sakurai, Shintaro Nomura, Kenji Shiraishi, Kenji Ohmori, Keisaku Yamada

Keywords:

Photoluminescence (PL), Silicon-on-Insulator (SOI)

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References

[1] L.M. Smith and J.P. Wolfe: Phys. Rev. B Vol. 51 (1995), p.7521.

Google Scholar

[2] S. Nihonyanagi and Y. Kanemitsu: Appl. Phys. Lett. Vol. 85 (2004), p.5721.

Google Scholar

[3] N. Pauc, V. Calvo, J. Eymery, F. Fournel, and N. Magnea: Phys. Rev. B Vol. 72(2005), p.205324.

Google Scholar

[4] Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, and S. Miyazaki: ECS Transactions Vol. 25 (2009), p.463.

DOI: 10.1149/1.3203984

Google Scholar