Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures

Abstract:

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We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOI) samples. Thickness dependence of a free exciton (FE) PL and an electron-hole droplet (EHD) PL has been investigated. We have found a remarkable enhancement of an EHD PL with decrease in the thickness of SOI samples.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

39-42

DOI:

10.4028/www.scientific.net/KEM.470.39

Citation:

Y. Sakurai et al., "Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures", Key Engineering Materials, Vol. 470, pp. 39-42, 2011

Online since:

February 2011

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$35.00

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DOI: 10.1149/1.3203984

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