Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices

Yoshinari Kamakura; Tomofumi Zushi; Takanobu Watanabe; Nobuya Mori; Kenji Taniguchi

doi:10.4028/www.scientific.net/KEM.470.14

Paper Titles

Preface, Sponsors and Committees

High Mobility Ge-Based CMOS Device Technologies
p.1

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator
p.8

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
p.14

Functional Device Applications of Nanosilicon
p.20

Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
p.27

KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
p.33

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
p.39

Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
p.43

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Impact of Self-Heating Effect on the Electrical...

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices

Abstract:

Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.