SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator

Abstract:

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We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

8-13

DOI:

10.4028/www.scientific.net/KEM.470.8

Citation:

T. Sadoh et al., "SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator", Key Engineering Materials, Vol. 470, pp. 8-13, 2011

Online since:

February 2011

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$35.00

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