SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator

Taizoh Sadoh; Kaoru Toko; Masashi Kurosawa; Takanori Tanaka; Takashi Sakane; Yasuharu Ohta; Naoyuki Kawabata; Hiroyuki Yokoyama; Masanobu Miyao

doi:10.4028/www.scientific.net/KEM.470.8

Paper Titles

Preface, Sponsors and Committees

High Mobility Ge-Based CMOS Device Technologies
p.1

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator
p.8

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
p.14

Functional Device Applications of Nanosilicon
p.20

Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
p.27

KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
p.33

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
p.39

Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
p.43

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470SiGe-Mixing-Triggered Rapid-Melting-Growth of...

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator

Abstract:

We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO₂ films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm²/Vs owing to the high crystallinity.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

8-13

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.8

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Online since:

February 2011

Authors:

Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

Keywords:

Ge-On-Insulator, Large Scale Integrated Circuit, Liquid Phase Epitaxy (LPE)

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