Preface, Sponsors and Committees
High Mobility Ge-Based CMOS Device Technologies
p.1
p.1
SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator
p.8
p.8
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
p.14
p.14
Functional Device Applications of Nanosilicon
p.20
p.20
Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
p.27
p.27
KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
p.33
p.33
Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
p.39
p.39
Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
p.43
p.43
Preface, Sponsors and Committees
Abstract:
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Periodical:
Key Engineering Materials (Volume 470)
Online since:
February 2011
Сopyright:
© 2011 Trans Tech Publications Ltd. All Rights Reserved
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