Paper Titles

Preface, Sponsors and Committees

High Mobility Ge-Based CMOS Device Technologies
p.1

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator
p.8

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
p.14

Functional Device Applications of Nanosilicon
p.20

Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
p.27

KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
p.33

Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
p.39

Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
p.43

HomeKey Engineering MaterialsKey Engineering Materials Vol. 470High Mobility Ge-Based CMOS Device Technologies

High Mobility Ge-Based CMOS Device Technologies

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Abstract:

In this paper, we report on critical issues and possible solutions for realizing Ge MOSFETs on the Si platform. The main critical objectives in regard to Ge MOSFETs are (1) formation of high quality Ge channel layers on Si substrates (2) MIS gate stacks with much smaller EOT and interface defects (3) superior source/drain junction technology (4) combination of mobility booster technologies such as surface orientation and strain. We demonstrate that GeO2/Ge MOS interfaces can provide superior interface properties, leading to high hole and electron mobility. It is also shown that a gas phase doping technique is promising for forming superior n+/p junctions, which is critical for obtaining Ge nMOSFETs. Also, the importance of surface orientation engineering on the further mobility enhancement of Ge CMOS is addressed.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

1-7

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.1

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Online since:

February 2011

Authors:

Shinichi Takagi, Sanjeewa Dissanayake, Mitsuru Takenaka

Keywords:

Ge MOSFETs, Ge-On-Insulator, Interface State, Mobility, Surface Orientation

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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