Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure

Masakazu Muraguchi; Yoko Sakurai; Yukihiro Takada; Yasuteru Shigeta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki; Shintaro Nomura; Kenji Shiraishi; Tetsuo Endoh

doi:10.4028/www.scientific.net/KEM.470.48

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470Collective Electron Tunneling Model in Si-Nano Dot...

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure

Abstract:

We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

48-53

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.48

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Online since:

February 2011

Authors:

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

Keywords:

Electron Dynamics, Quantum Dot (QD), Si-Nano Dot, Si-Nano Dot Type Floating Gate MOS Capacitor, Tunnelling

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References

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