Paper Titles
Preface
Application of Ultrasonic Stress Relief in the Fabrication of SU-8 Micro Structure
p.3
Design and Empirical Study for Coner Compensation in 25% Wt TMAH Etching on (100) Silicon Wafers
p.9
Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques
p.14
Dynamic Characteristics Measurement of Silicon Micro-Cantilever in Low Temperature Environment
p.18
Low Cost Fabrication of Micro Glass Cavities For MEMS Wafer Level and Hermetic Packaging
p.23
Study of Under Etching Characters of Si (100) in Surfactant Added TMAH
p.34
Design and System-Level Simulation of a Novel On-Chip Test Based on Macromodels
p.38
An Electrostatic Force Feedback Approach for Extending the Bandwidth of MEMS Vibratory Gyroscope
p.43

Application of Ultrasonic Stress Relief in the Fabrication of SU-8 Micro Structure

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Abstract:

SU-8 photoresist has received a lot of attention in the MEMS field because of its excellent lithography properties. However, its high internal stress affects the overall pattern quality of the micro structures. The purpose of this work is to reduce the internal stress in SU-8 micro structure by ultrasonic stress relief technology. The stress relief mechanism of SU-8 micro structure was presented. The effect of ultrasonic stress relief on SU-8 micro structure was studied by experiments. The experimental results show that the internal stress in SU-8 micro structures can be reduced by ultrasonic stress relief technology.

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Periodical:

Key Engineering Materials (Volume 483)

Pages:

3-8

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.483.3

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Online since:

June 2011

Authors:

Li Qun Du, Qi Jia Wang, Xiao Lei Zhang

Keywords:

Internal Stress, Micro-Electromechanical System (MEMS), SU-8 Micro Structure, Ultrasonic Stress Relief

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Du L Q, Zhu S M, Yu L C. Effect of post exposure bake temperature on thermal swelling of SU-8 photoresist. Opt Prec Eng, 2008, 16(3): 500-504 (in Chinese).

Google Scholar

[2] Li B, Chen Q F. Low-stress ultra-thick SU-8 UV photolithography process for MEMS. Microlith Microfab Microsyst, 2005, 4(4): 0430081-0430086.

Google Scholar

[3] Chang H K, Kim Y K. UV-LIGA process for high aspect ratio structure using stress barrier and C-shape etch hole. Sens Actuators A-Phys, 2000, 84(3): 342-350.

DOI: 10.1016/s0924-4247(00)00408-8

Google Scholar

[4] Williams D J, Wang W J. Study on the post-baking process and the effects on UV lithography of high aspect ratio SU-8 microstructures. Microlith Microfab Microsyst, 2004, 3(4): 563-568.

Google Scholar

[5] Zhang J Y, Chen D, Zhu J, et al. Process study of high-aspect-ratio ultrathick SU-8 microstructure. J Funct Mater Dev, 2005, 11(2): 251-254 (in Chinese).

Google Scholar

[6] Kubenz M, Ostrzinski U, Reuther F, et al. Challenges of processing thick and ultra-thick photoresist films. In: Proceedings of SPIE, 2003, 5039: 1272-1280.

DOI: 10.1117/12.485084

Google Scholar

[7] Ochi M, Yamashita K, Shimbo M. The mechanism for occurrence of internal stress during curing epoxide resins. J Appl Polym Sci, 1991, 43(11): 2013-(2019).

DOI: 10.1002/app.1991.070431108

Google Scholar

[8] Kong D J, Zhang Y K, Chen Z G, et al. Experimental study of residual stress of galvanized passive film based on XRD. ACTA PHYSICA SINCA, 2007, 56(7): 4056-4061.

Google Scholar