Paper Titles
Preface
Application of Ultrasonic Stress Relief in the Fabrication of SU-8 Micro Structure
p.3
Design and Empirical Study for Coner Compensation in 25% Wt TMAH Etching on (100) Silicon Wafers
p.9
Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques
p.14
Dynamic Characteristics Measurement of Silicon Micro-Cantilever in Low Temperature Environment
p.18
Low Cost Fabrication of Micro Glass Cavities For MEMS Wafer Level and Hermetic Packaging
p.23
Study of Under Etching Characters of Si (100) in Surfactant Added TMAH
p.34
Design and System-Level Simulation of a Novel On-Chip Test Based on Macromodels
p.38
An Electrostatic Force Feedback Approach for Extending the Bandwidth of MEMS Vibratory Gyroscope
p.43

Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

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Abstract:

In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.

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Periodical:

Key Engineering Materials (Volume 483)

Pages:

14-17

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.483.14

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Online since:

June 2011

Authors:

Jian An Lv, Zhen Chuan Yang, Gui Zheng Yan, Yong Cai, Bao Shun Zhang, Kevin J. Chen

Keywords:

Bending Tests, Cantilever, Gallium Nitride (GaN), Micro-Electromechanical System (MEMS)

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S. J. Pearton, F. Ren, A. P. Zhang, and K. P. Lee, Mat. Sci. Eng. R, Vol. 30, (2000), p.55.

Google Scholar

[2] V. Cimalla, J. Pezoldt, and O. Ambacher, J. Phys. D: Appl. Phys., Vol. 40, (2007), p.6386.

Google Scholar

[3] S. Davies, T. S. Huang, M. H. Gass, A. J. Papworth, T. B. Joyce, and P. R. Chalker, Appl. Phys. Lett., Vol. 84, (2004), p.2566.

Google Scholar

[4] Z. Yang, R. Wang, S. Jia, D. Wang, B. Zhang, K. Lau, and K. Chen, Appl. Phys. Lett., Vol. 88, (2006), p.041913.

Google Scholar

[5] Z. C. Yang, R. N. Wang, D. L. Wang, B. S. Zhang, K. J. Chen, and K. M. Lau, in IEDM Tech. Digest, p.307, (2005).

Google Scholar

[6] T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernandez-Guillen, C. Pietzka, M. Kunze et al., IEEE Electron Devic. Lett., Vol. 27, (2006), p.309.

DOI: 10.1109/led.2006.872918

Google Scholar

[7] S. Vicknesh, S. Tripathy, V. K. X. Lin, L. S. Wang, and S. J. Chua, Appl. Phys. Lett., Vol. 90, (2007), 071906.

Google Scholar

[8] S. Tripathy, V. K. X. Lin, S. Vicknesh, and S. J. Chua, J. Appl. Phys., Vol. 101, (2007), p.063525.

Google Scholar

[9] K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost et al., Appl. Phys. Lett., Vol. 93, (2008), 173504.

DOI: 10.1063/1.3002296

Google Scholar

[10] K. Tonisch, C. Buchheim, F. Niebelschutz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, and R. Goldhahn, J. Appl. Phys., Vol. 104, (2008), 084516.

DOI: 10.1063/1.3005885

Google Scholar

[11] J.N. Lv, Z.C. Yang, G.Z. Yan, W.K. Lin, Y. Cai, B.S. Zhang, and K. J. Chen, IEEE Electron Device Letters, Vol. 30, (2009), p.1045.

Google Scholar