Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques
In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.
J. A. Lv et al., "Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques", Key Engineering Materials, Vol. 483, pp. 14-17, 2011