Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

Abstract:

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In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.

Info:

Periodical:

Edited by:

Xiaohao Wang

Pages:

14-17

DOI:

10.4028/www.scientific.net/KEM.483.14

Citation:

J. A. Lv et al., "Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques", Key Engineering Materials, Vol. 483, pp. 14-17, 2011

Online since:

June 2011

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Price:

$35.00

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