Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires

Abstract:

A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO₃, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO₃ and immersing time and longer etching time may result in longer silicon nanowires.

• Periodical: Key Engineering Materials (Volume 483)
• Pages: 584-588
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.483.584
• Online since: June 2011
• Authors: Yang He, Cheng Yu Jiang, Heng Xu Yin, Chen Jun, Wei Zheng Yuan
• Keywords: Diameter, Length, Silicon Nanowire, Wet Etching

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