Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires

Abstract:

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A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO3, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.

Info:

Periodical:

Edited by:

Xiaohao Wang

Pages:

584-588

DOI:

10.4028/www.scientific.net/KEM.483.584

Citation:

Y. He et al., "Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires", Key Engineering Materials, Vol. 483, pp. 584-588, 2011

Online since:

June 2011

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$35.00

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