Application of ICP Deep Trenches Etching in the Fabrication of FBAR Devices

Abstract:

It is presented a fabrication processing of a two step method in deep silicon etching for MEMS applications using an the UK company Surface Technology Systems plc (STS), inductively-coupled plasma (ICP) etch technique STS ICP deep dry etching system. A brief introduction of schematic process of etching deep trenches on silicon substrate is first given, then with two step method for etching deep trenches. The film bulk acoustic resonator (FBAR) devices have been fabricated using STS ICP deep dry etching system with maximum etch rate of 4.6μ m/min, depth more than 450μm and sidewall roughness no more than 0.14μm. At the end of the second step process, the etch selective ratio of silicon to silicon oxygen is enhanced to ensure the device yield. At the same time, the negative effects such as microloads effects, footing effects, lag effects and micrograss effects are suppressed effectively.

• Periodical: Key Engineering Materials (Volume 503)
• Pages: 293-297
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.503.293
• Online since: February 2012
• Authors: Zheng Guo Shang, Dong Ling Li, Sheng Qiang Wang, Jian Hua Liu
• Keywords: Deep Trench, Double Protective Layer, Micrograss Effects, Selective Ratio

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