Design and Simulation for Tri-Axial Piezoresistive MEMS Accelerometer

Meng Liu; Wei Zhang; Yi Long Hao

doi:10.4028/www.scientific.net/KEM.503.312

Paper Titles

Application of ICP Deep Trenches Etching in the Fabrication of FBAR Devices
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Analysis of Broken Wires during Gold Wire Bonding Process
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A High Performance Fourth-Order Single-Loop Sigma Delta Modulator Applied in Micro-Inertial Sensors
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An In Situ Measuring Method for Young's Modulus of a MEMS Film Base on Resonance Frequency
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Design and Simulation for Tri-Axial Piezoresistive MEMS Accelerometer
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Emulated Analysis of the Preview-LQG Controller for Micromachined Tunneling Gyroscope
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Two Fabrication Schematics of Silicon Micro Perforated Panel Based on MEMS Technology
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Research on the Hydrophobicity of Black Silicon Based on Virtual Process
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Investigation of Silicon Lapping and Polishing Technique for Micro-Inertial Device
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 503Design and Simulation for Tri-Axial Piezoresistive...

Design and Simulation for Tri-Axial Piezoresistive MEMS Accelerometer

Abstract:

This paper presents analytical models for tri-axial accelerometer based on one seismic mass and eight beams. The model makes it possible to better understand and to predict the behavior of the accelerometer. The accelerometer discussed in this paper was designed to measure high g-forces in every single axis. We use finite element mechanics analysis and design for optimization of the device structure. FEA software ANSYS was used to simulate the behavior of the accelerometer when it was subjected to static high-g forces. The analytical results of simulation and theoretical demonstrate that the accelerometer we designed is feasible.

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Periodical:

Key Engineering Materials (Volume 503)

Pages:

312-317

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.503.312

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Online since:

February 2012

Authors:

Meng Liu, Wei Zhang, Yi Long Hao

Keywords:

Finite Element Analysis (FEA), High-G Force, Piezoresistive Accelerometer, Silicon

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