Physical Properties of the SiCxNyHz Films

V.R. Shayapov; M. Rumyantsev; N.I. Fainer; B.M. Ayupov

doi:10.4028/www.scientific.net/KEM.508.283

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Physical Properties of the SiCxNyHz Films

Physical Properties of the SiC_xN_yH_z Films

Abstract:

The SiC_xN_yH_z Films Were Prepared by PECVD Method Using Organosilicon Volatile Compound Hexamethyldisilazane as a Precursor. Some Important Physical and Chemical Properties Were Studied by the Complex of Modern Physical Methods. It Was Shown that at Low Deposition Temperatures the Films Contain the Chemical Bonds of Organic Nature and Have Low Values of Young’s Modulus, Refractive Index and Density. They Possess High Elasticity which Indicates to their Polymeric-Like Structure. At Higher Deposition Temperatures the Films Are Inorganic Composite Materials Consisting of Amorphous Part and Nanocrystals of Graphite and Silicon Nitride. Decrease in Optical Band Gap and Coefficient of Thermal Expansion Is Observed with Deposition Temperature Increase.

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Periodical:

Key Engineering Materials (Volume 508)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.283

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Online since:

March 2012

Authors:

V.R. Shayapov, M. Rumyantsev, N.I. Fainer, B.M. Ayupov

Keywords:

Density, Film, Mechanical Stresses, PECVD, Young's Modulus

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References

[1] A. Badzian, Stability of silicon carbonitride phases, J. Am. Ceram. Soc. 85 (2002) 16-20.

Google Scholar

[2] N.I. Fainer, Y.M. Rumyantsev, M.L. Kosinova, Functional Nanocrystalline Films of Silicon Carbonitride, Chemistry for Sustainable Development. 9 (2001) 31-36.

Google Scholar

[3] C.W. Chen, C.C. Huang, Y.Y. Lin et al., Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection, Diamond and Relat. Mater. 14 (2005) 1010-1013.

DOI: 10.1016/j.diamond.2004.11.027

Google Scholar

[4] M.L.P. da Silva, I.H. Tan, F.A.P. Nascimento at al., Use of plasma polymerized highly hydrophobic hexamethyldisilazane (HMDS) films for sensor development, Sensor Actuat. B.: Chem. 91 (2003) 362-369.

DOI: 10.1016/s0925-4005(03)00112-6

Google Scholar

[5] A.T. de Carvalho, R.A.M. Carvalho, M.L.P. da Silva et al., Hydrophobic Plasma Polymerized Hexamethyldisilazane Thin Films: Characterization and Uses, Materials Research. 9 (2006) 9-13.

DOI: 10.1590/s1516-14392006000100003

Google Scholar

[6] N. Fainer, Y. Rumyantsev, M. Kosinova et al., Low-k dielectrics on base of silicon carbon nitride films, Surf. Coat. Technol. 201 (2007) 9269–9274.

DOI: 10.1016/j.surfcoat.2007.04.046

Google Scholar

[7] N.I. Fainer, M.L. Kosinova, Yu.M. Rumyantsev et al. Thin silicon carbonitride films are perspective low-k materials, J. Phys. Chem. Sol. 69 (2008) 661-668.

DOI: 10.1016/j.jpcs.2007.07.061

Google Scholar

[8] D. Schneider, T. Schwarz, A photoacoustic method for characterizing thin films, Surf. Coat. Technol. 91 (1997) 136-146.

Google Scholar

[9] J. -H. Zhao, T. Ryan, P.S. Ho., Measurement of elastic modulus, Poisson ratio, and coefficient of thermal expansion of on-wafer submicron films, J. Appl. Phys. 85 (1999) 6421-6424.

DOI: 10.1063/1.370146

Google Scholar

[10] J. Tauc R. Grigorovichi, A. Vancu, Optical properties and dielectric structure of amorphous germanium, Physica Status Solidi. 15 (1966) 627-637.

DOI: 10.1002/pssb.19660150224

Google Scholar

[11] N.I. Fainer, Y.M. Rumyantsev, M.L. Kosinova, Physical and Chemical Transformations in Thin Films of Silicon Carbonitride during Thermal Annealing, Chemistry for Sustainable Development. 9 (2001) 37–43.

Google Scholar