Magnetron Sputtering of Tantalum Oxide Thin Electrolyte Film for Electrochromic Applications

Chien Cheng Liu; Kuang I Liu; Hao Tung Lin; Jow Lay Huang

doi:10.4028/www.scientific.net/KEM.512-515.1604

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 512-515Magnetron Sputtering of Tantalum Oxide Thin...

Magnetron Sputtering of Tantalum Oxide Thin Electrolyte Film for Electrochromic Applications

Abstract:

Electrochromism have been widely investigated due to their potential applications such as automobile and building window. In this study, tantalum oxide thin films used as ion conducting layer were deposited on WO₃/ITO at room temperature by magnetron sputtering. The thickness of tantalum oxide films were varied to investigate their effects on composition, microstructure, optical properties, and electrochromic properties determined by X-ray diffraction, UV-visible spectrometer, Atomic force microscope (AFM), and field-emission scanning electron microscope (FE-SEM). Experimental results indicated Ta₂O₅ at thickness of 300 nm with low packing density were favorable for ions transmission deposited on WO₃/ITO had better electrochromic property.

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Key Engineering Materials (Volumes 512-515)

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1604-1608

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https://doi.org/10.4028/www.scientific.net/KEM.512-515.1604

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June 2012

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Chien Cheng Liu, Kuang I Liu, Hao Tung Lin, Jow Lay Huang

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Electrochromism, Magnetron Sputtering, Tantalum Oxide

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