Preparation of Patterned BiFeO3 Thin Films on the Functional Silicon Substrates Surface

G.Q. Tan; Meng Cheng; Yan Wang; Lei Cheng; Ao Xia

doi:10.4028/www.scientific.net/KEM.512-515.1731

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 512-515Preparation of Patterned BiFeO3 Thin Films on the...

Preparation of Patterned BiFeO₃ Thin Films on the Functional Silicon Substrates Surface

Abstract:

Patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) was fabricated on silicon substrates, utilizing short wave UV irradiation meter (λ=184.9nm) as the photolithograph apparatus under the cover of the photomask. The patterned BiFeO₃ were prepared on the functional OTS-SAMs by sol-gel method. The characterization of the samples patterns was carried out by various techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and energy disperse spectroscopy (EDS). The results indicate that the pattern BiFeO₃ thin films were successfully prepared on the functional OTS-SAMs by sol-gel method and the thin films were BiFeO₃ thin films with hexagonal perovskite distorted structure which has clear boundaries and 200µm deposited lines width.

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Periodical:

Key Engineering Materials (Volumes 512-515)

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1731-1735

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https://doi.org/10.4028/www.scientific.net/KEM.512-515.1731

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Online since:

June 2012

Authors:

G.Q. Tan, Meng Cheng, Yan Wang, Lei Cheng, Ao Xia

Keywords:

BiFeO₃ Thin Film, OTS-SAMs, Patterning

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