Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

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Abstract:

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

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Periodical:

Key Engineering Materials (Volumes 512-515)

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1736-1739

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June 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] J Wang, J B Neaton, H Zheng, et al, Epitaxial BiFeO3 multiferroic thin film heterostructures, Science. 299 (2003) 1719-1722.

Google Scholar

[2] M Fiebig, Observation of coupled magnetic and electric domains, Nature. 419 (2002) 818.

Google Scholar

[3] S Iakovlev, C H Soherbeck, M Kuhnke, et al, Multiferroic BiFeO3 thin films processed via chemical solution deposition: Structural and electrical characterization, J. Appl. Phys. 97 (2005) 094901-094906.

DOI: 10.1063/1.1881776

Google Scholar

[4] Y P Wang, L Zhou, M F Zhang, et al, Room-temperature saturated ferroelectric polarization in BiFeO3 ceramics synthesized by rapid liquid phase sintering, J. Appl. Phys Lett. 84 (2004) 10.

DOI: 10.1063/1.1667612

Google Scholar