Preparation and Properties of ZnO/ZAO Double-Layers Thin Films on the Substrate of Glass

Abstract:

Aluminium zinc oxide(ZAO) thin films were deposited on soda-Lime-Silica glass substrate by middle frequency power magnetron sputtering. Then zinc oxide(ZnO) thin films were deposited above ZAO thin films by electrochemical deposition method at different time. ZAO thin films and ZnO/ZAO double-Layers thin films were characterized by X-Ray diffraction(XRD) and scanning electron microscope(SEM). A four-Point probe was used to determine the resistivity of the films. The optical transmittance of ZAO films and ZnO/ZAO films was measured by UV-Visible spectrum. The results represent that the transmittance of ZAO/ZnO thin films decreases gradually with deposition time increasing. When the deposition time is 5 minutes, the maximum transmittance of ZnO/ZAO films reaches to 85% at wave length from 400nm to 600nm, and the thickness and resistivity of thin film are 610nm and 2.04×10^-3Ω•cm, respectively. However, the thickness and resistivity are highest when the deposition time is 20 minutes, which reaches to 808nm and 1.2×10^-2Ω•cm. Meanwhile, the lattice constants a and c of ZAO/ZnO thin films demonstrate an expansion with deposition time increasing. In essence, good-Quality double-Layers thin films of ZnO/ZAO play an important role in CIGS solar cells.

• Periodical: Key Engineering Materials (Volume 537)
• Pages: 150-154
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.537.150
• Online since: January 2013
• Authors: Gui Shan Liu, Ming Jun Wang, Zhi Qiang Hu, Yan Yan Jiang, Xiao Yue Shen
• Keywords: CIGS Solar Cells, Electrochemical Deposition, Magnetron Sputtering, ZnO/ZAO Double-Layers Thin Film

References

[1] Information on http://blog.sina.com.cn/nonferrousme

[2] M.H. Harati, J. Jia, K. Giffard, K. Pellarin, C. Hewson, A.L. David, W.M. Lau and Z.F. Ding, One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide(CIGS) thin films for solar cells, Chem. Phys. 12 (2010) 15282-15290.

DOI: 10.1039/c0cp00586j

[3] B.N. Illy, A.C. Cruickshank, S. Schumann, et al., Electrodeposition of ZnO layers for photovoltaic applications: controlling film thickness and orientation.J. Mater. Chem. 12 (2011) 12949.

DOI: 10.1039/c1jm11225b

[4] T. Minemoto, T. Matsui, H. Takakura, et al, Theoretical Analysis of the Effect of Conduction Band Offset of Window/CIS Layers on Performance of CIS Solar Cells Using Device Simulation. Solar Energy Materials & Solar Cells. 67 (2001) 83-88.

DOI: 10.1016/s0927-0248(00)00266-x

[5] Y.M. Xue, Y. Sun, F.Y. Li, et al., Research on the Structure of the Heterojunction of the CIGS Thin Film Soler Cells. Journal of synthetic crystals. 33 (2004) 841-842.

[6] H.M. Wei, H.B. Gong, Y.Z. Wang, X.L. Hu, L. Chen, H.Y. Xu, P. Liu and B.Q. Cao, Three kinds of Cu2O/ZnO heterostructure solar cells fabricated with electrochemical deposition and their structure-related photovoltaic properties, Cryst Eng Comm. 13 (2001) 6065.

DOI: 10.1039/c1ce05540b

[7] C. Frederik, L. Colin, L. Neil, Y.S. Allan, N. R. Michael and H. John, Growth of ZnO thin films-experiment and theory. J. Mater. Chem. 15 (2005) 139.

[8] Z.K. Tang, G. Wang, K. Liu, et al, Room-temperature ultraviolet laser emission from self-assembled ZnO micro crystallite thin film. Appl. Phys. Letts. 72 (1998) 3270-3272.

DOI: 10.1063/1.121620

[9] H.J. Hang, Y.F. Chen, S.K. Hong, MBE Growth of Gigh-Quality ZnO Films. Journal of Crystal Growth. 209 (200) 816-821.

[10] A.C. Rastogi, S.B. Desu, P.B. Hattacharya, R.S. Katiyar, Effect of starin Gradient on Luminescence and Electronic Properties of Pulseed Laser Deposited Zinc Oxide Thin Films.J. Electronceram. 13(2004) 345-352.

DOI: 10.1007/s10832-004-5124-9

[11] D. Calestani, M. Z. Zha, L. Zanotti, M. Villani and A. Zappettini, Low temperature thermal evaporation growth of aligned ZnO nanorods on ZnO film: a growth mechanism promoted by Zn nanoclusters on polar surface, CrystEngComm. 13 (2011) 1707-1712.

DOI: 10.1039/c0ce00670j

[12] K.J. Omichi, N.K. Takahashi, T.K. Nakamura, et al., AP-HVPE growth of ZnO with room-temperature ultraviolet emission Journal of materials, 11 (2001) 3158-3160.

[13] K.J. Omichi, K.Z. Kaiya, N.K. Takahashi, et al., Growth of ZnO thin films exhibiting room- temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy. J. Mater. Chem. 11 (2001) 262-263.

DOI: 10.1039/b006656g

[14] B.D. Cullity, S. Rstock, Elements of X-ray Diffraction, Prentice Hall, New Jersey,2001.

[15] O. Lupan, T. Pauporte, L. Chow, B. Viana, F. Pelle, L.K. Ono, B. Roldan Cuenya, H. Heinrich, Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium.Applied Surface Science.256 (2010) 1895-1907.

DOI: 10.1016/j.apsusc.2009.10.032

[16] J. B. Franklin, B. Zou, P. Petrov, D. W. McComb, M. P. Ryan and M. A. McLachlan. Optimised pulsed laser deposition of ZnO thin films on transparent conducting substrate. J. Mater. Chem. 21 (2011) 8178.

DOI: 10.1039/c1jm10658a