Ferroelectric and Electrical Behavior of Bi_4-xNd_xTi₃O₁₂ Thin Films

Abstract:

Nd₂O₃-doped bismuth titanate (Bi_4-xNd_xTi₃O₁₂: BNT) thin films with random oriention were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BNT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the BNT Film with x=0.8 were 25μC/cm² and 55KV/cm , respectively. After 3×1010 switching cycles, 15% degradation of Pr is observed in the film.

• Periodical: Key Engineering Materials (Volume 537)
• Pages: 130-133
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.537.130
• Online since: January 2013
• Authors: C.Q. Huang, X.B. Liu, X.A. Mei, J. Liu
• Keywords: Bismuth Titanate, Doping, Ferroelectric, Film

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