Electrical Characterization and Microstructures of Bi3.3Tb0.6Ti3O12 and Bi3.3Tb0.6Ti2.97V0.03O12 Thin Films

Rui Fang Liu; M.B. Sun; W.P. Ding; X.A. Mei

doi:10.4028/www.scientific.net/KEM.537.126

Paper Titles

Preparation and Properties of Dy Doped La and Sc Solution of BiFeO₃ Film
p.109

Ferroelectric Property and Microstructures of La-Doped Bi₄Ti₃O₁₂ Thin Films
p.114

Dielectric and Ferroelectric Properties of Er₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.118

Electrical Characteristics and Microstructures of Bi_2.9Pr_0.9Ti₃O₁₂ and Bi_2.9Pr_0.92Ti_2.97V_0.03O₁₂ Thin Films
p.122

Electrical Characterization and Microstructures of Bi_3.3Tb_0.6Ti₃O₁₂ and Bi_3.3Tb_0.6Ti_2.97V_0.03O₁₂ Thin Films
p.126

Ferroelectric and Electrical Behavior of Bi_4-xNd_xTi₃O₁₂ Thin Films
p.130

Preparation of NASICON Disk by Tape Casting and its CO₂ Sensing Properties
p.134

Structure and Optical Properties of Al_1−xSc_xN Thin Films
p.140

Morphological and Optical Properties of CdS Nano-Crystalline Thin Films by Chemical Bath Deposition
p.144

HomeKey Engineering MaterialsKey Engineering Materials Vol. 537Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Bi_3.3Tb_0.6Ti₃O₁₂ and Bi_3.3Tb_0.6Ti_2.97V_0.03O₁₂ Thin Films

Abstract:

Bi_3.3Tb_0.6Ti₃O₁₂(BTT), Bi_3.3Tb_0.6Ti_2.97V_0.03O₁₂(BTTV), and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tb doping into BIT also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BTT film were 25 μC/cm² and 85 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 35 μC/cm², which is much larger than that of the BTT film.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 537)

Pages:

126-129

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.537.126

Citation:

Cite this paper

Online since:

January 2013

Authors:

Rui Fang Liu, M.B. Sun, W.P. Ding, X.A. Mei

Keywords:

Dielectric, Ferroelectric, Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. F. Scott, C. A. P. De Araujo, Ferroelectric memories. Science. 246 (1998) 1400-1404.

Google Scholar

[2] H. N. Lee, D. Hesse, N. Zakharov, et al: Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates, Science. 296 (2002) 2006-2010.

Google Scholar

[3] B. H. Park, B. S. Kang, S. D. Bu, et al: Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature. 401 (1999) 682-686.

DOI: 10.1038/44352

Google Scholar

[4] T. Kojima, T. Sakai, T, Watanabe, et al: large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 80 (2002) 2746-2750.

DOI: 10.1063/1.1468914

Google Scholar

[5] Y. N0guchi, M. Miyayama, Large remanent of polarization of vanadium-doped Bi4Ti3O12, Appl Phys Lett. 78(2001) 1903-1907.

DOI: 10.1063/1.1357215

Google Scholar

[6] Y. C. Chang, D. H. Kuo, The improvement in ferroelectric performance of (Bi3.15Nd0.85) 4Ti3O12 films By the addition of hydrogen peroxide in a spin-coating solution, Thin Solid Films. 515(2006) 1683-1687.

DOI: 10.1016/j.tsf.2006.06.024

Google Scholar

[7] M. Chen, Z. L. Liu, Y. Wang, et al: Electrical characteristics and microstructures of Sm2O3-doped Bi4Ti3O12, Chinese Physics Letters. 21(2004) 1181-1185.

Google Scholar

[8] U. Chon, K. B. Kim, H. M. Jang, et al: Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations, Appl. Phys. Lett. 79 (2001) 3137-3141.

DOI: 10.1063/1.1415353

Google Scholar

[9] H. Uchida, H. Yoshikawa, I. Okada, et al: Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution, Appl. Phys. Lett. 81 (2002) 2229-2233.

DOI: 10.1063/1.1507839

Google Scholar