Dielectric and Ferroelectric Properties of Er2O3-Doped Bi4Ti3O12 Thin Films

X.B. Liu; X.A. Mei; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/KEM.537.118

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 537Dielectric and Ferroelectric Properties of...

Dielectric and Ferroelectric Properties of Er₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Er₂O₃-doped bismuth titanate (Bi_4-xEr_xTi₃O₁₂, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Er-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm² and 80 kV/cm, respectively.

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Key Engineering Materials (Volume 537)

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118-121

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https://doi.org/10.4028/www.scientific.net/KEM.537.118

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January 2013

Authors:

X.B. Liu, X.A. Mei, C.Q. Huang, J. Liu

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Dielectric, Ferroelectric, Film

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References

[1] J. F. Scott, C. A. P. De Araujo, Ferroelectric memories. Science. 246 (1998) 1400-1404.

Google Scholar

[2] B. H. Park, B. S. Kang, S. D. Bu, et al: Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature. 401 (1999) 682-686.

DOI: 10.1038/44352

Google Scholar

[3] H. N. Lee, D. Hesse, N. Zakharov, et al: Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates, Science. 296 (2002) 2006-2010.

Google Scholar

[4] T. Kojima, T. Sakai, T, Watanabe, et al: large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 80 (2002) 2746-2750.

DOI: 10.1063/1.1468914

Google Scholar

[5] Y. N0guchi, M. Miyayama, Large remanent of polarization of vanadium-doped Bi4Ti3O12, Appl Phys Lett. 78(2001) 1903-1904.

DOI: 10.1063/1.1357215

Google Scholar

[6] Y. C. Chang, D. H. Kuo: The improvement in ferroelectric performance of (Bi3.15Nd0.85) 4Ti3O12 films By the addition of hydrogen peroxide in a spin-coating solution, Thin Solid Films. 515(2006) 1683-1687.

DOI: 10.1016/j.tsf.2006.06.024

Google Scholar

[7] T. Watanabe, H. Funakubo, M. Osada, et al: Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition, Appl. Phys. Lett. 80 (2002) 2229-2233.

DOI: 10.1063/1.1430267

Google Scholar

[8] U. Chon, K. B. Kim, H. M. Jang, et al: Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations, Appl. Phys. Lett. 79 (2001) 3137-3141.

DOI: 10.1063/1.1415353

Google Scholar

[9] H. Uchida, H. Yoshikawa, I. Okada, et al: Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution, Appl. Phys. Lett. 81 (2002) 2229-2233.

DOI: 10.1063/1.1507839

Google Scholar

[10] M. Chen, Z. L. Liu, Y. Wang, et al: Electrical characteristics and microstructures of Sm2O3-doped Bi4Ti3O12, Chinese Physics Letters. 21(2004) 1181-1185.

Google Scholar