Preparation and Properties of Dy Doped La and Sc Solution of BiFeO₃ Film

Abstract:

A series of Dy doped La and Sc solution of BiFeO₃ thin films have been prepared by using spin-coating process on conductive indium tin oxide (ITO)/glass substrates, which a simple sol-gel possess is applied and annealed at 500°C. With the increase of content of Dy, the strongest peak (110) of La and Sc solution BiFeO₃ film tends to further broaden. There is no second phase existence within the present Dy doping level. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 film was about 370 nm. For Dy doping level is 0.05, the maximum double remanent polarization 2Pr of as-prepared BiFeO₃ thin film is15.44 μC/cm². Image of atomic force microscopy indicated that the root-mean-square surface roughness value of as-prepared BiFeO3 thin film is 2.11 nm. The dielectric constant of as-prepared films tends to firstly increase and then decrease with the increase of Dy content

• Periodical: Key Engineering Materials (Volume 537)
• Pages: 109-113
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.537.109
• Online since: January 2013
• Authors: Xi Wei Qi, Xiao Yan Zhang, Xuan Wang, Hai Bin Sun, Jian Quan Qi
• Keywords: BiFeO₃ film, Dy-Doped, La Solution, Sc Solution, Sol-Gel (SG)

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