Electrical Characteristics and Microstructures of Bi2.9Pr0.9Ti3O12 and Bi2.9Pr0.92Ti2.97V0.03O12 Thin Films

Min Chen; X.A. Mei; Rui Fang Liu; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/KEM.537.122

Paper Titles

Investigation on the Representation Method for Microwave Absorbing Coat
p.105

Preparation and Properties of Dy Doped La and Sc Solution of BiFeO₃ Film
p.109

Ferroelectric Property and Microstructures of La-Doped Bi₄Ti₃O₁₂ Thin Films
p.114

Dielectric and Ferroelectric Properties of Er₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.118

Electrical Characteristics and Microstructures of Bi_2.9Pr_0.9Ti₃O₁₂ and Bi_2.9Pr_0.92Ti_2.97V_0.03O₁₂ Thin Films
p.122

Electrical Characterization and Microstructures of Bi_3.3Tb_0.6Ti₃O₁₂ and Bi_3.3Tb_0.6Ti_2.97V_0.03O₁₂ Thin Films
p.126

Ferroelectric and Electrical Behavior of Bi_4-xNd_xTi₃O₁₂ Thin Films
p.130

Preparation of NASICON Disk by Tape Casting and its CO₂ Sensing Properties
p.134

Structure and Optical Properties of Al_1−xSc_xN Thin Films
p.140

HomeKey Engineering MaterialsKey Engineering Materials Vol. 537Electrical Characteristics and Microstructures of...

Electrical Characteristics and Microstructures of Bi_2.9Pr_0.9Ti₃O₁₂ and Bi_2.9Pr_0.92Ti_2.97V_0.03O₁₂ Thin Films

Abstract:

Bi_2.9Pr_0.9Ti₃O₁₂(BPT) and Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂(BPTV) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Pr doping into Bi₄Ti₃O₁₂ (BIT) result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BPT film were 28 μC/cm² and 80 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 43 μC/cm², which is much larger than that of the BPT film.

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Key Engineering Materials (Volume 537)

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122-125

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https://doi.org/10.4028/www.scientific.net/KEM.537.122

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January 2013

Authors:

Min Chen, X.A. Mei, Rui Fang Liu, C.Q. Huang, J. Liu

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Dielectric, Ferroelectric, Film

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