Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

X.A. Mei; Rui Fang Liu; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/KEM.537.114

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 537Ferroelectric Property and Microstructures of...

Ferroelectric Property and Microstructures of La-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

La-doped bismuth titanate (Bi_4-xLa_xTi₃O₁₂: BLT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm² and 85KV/cm , respectively.

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Key Engineering Materials (Volume 537)

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114-117

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https://doi.org/10.4028/www.scientific.net/KEM.537.114

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January 2013

Authors:

X.A. Mei, Rui Fang Liu, C.Q. Huang, J. Liu

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Dielectric, Ferroelectric, Film

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