Influences of Crystallization Temperature and Slurry Concentration on Stress of PZT Thick Film Prepared by a Modified Sol-Gel Method

Abstract:

As a key MEMS transducer materials, PbZr_0.52Ti_0.48O₃(PZT) piezoelectric thick film should have good piezoelectric properties as well as lower stress. But now few studies on PZT film stress were carried out. The PZT thick films are deposited by a modified sol-gel method, and the influences of crystallization temperature and slurry concentration on stress are investigated in this paper. The result shows that the PZT thick film stress is tensile stress about 100-1000Mpa. With crystallization temperature increasing, thermal stress increases gradually. The stress increases about 3.5 times as the crystallization temperature rises from 600°C to 700°C. With powder concentration of slurry increasing, the stress of PZT thick film becomes smaller. The stress decreases about 7 times as powder concentration of slurry increasing from 1:4.5 to 1:3.5. The relationship between stress of PZT thick films and crystallization temperature is simulated by using the finite element method, and the results of simulation agree well with the experimental results.

• Periodical: Key Engineering Materials (Volumes 562-565)
• Pages: 952-957
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.562-565.952
• Online since: July 2013
• Authors: Wei Ren, Xiu Chen Zhao, Jun Hong Li
• Keywords: Crystallization Temperature, Finite Element Method (FEM), PZT Thick Films, Slurry Concentration, Stress

References

[1] P.Verardi, F.Craciun, M.Dinescu, et al, Epitaxial piezoelectric PZT thin films obtained by pulsed laser deposition, Thin Solid Films. 318 (1998) 265-269.

DOI: 10.1016/s0040-6090(97)01187-5

[2] H. Kueppers, T.Leuerer, U.Schnakenberg, et al. PZT thin films for piezoelectric microactuator applications, Sensors and Actuators A. 97-98 (2002) 680-684.

DOI: 10.1016/s0924-4247(01)00850-0

[3] S.A.S. Rodrigues, A.G. Rolo, A. Khodorov. Determination of residual stress in PZT films produced by laser ablation with X-ray diffraction and Raman spectroscopy, Journal of the European Ceramic Society. 30 (2010) 521–524.

DOI: 10.1016/j.jeurceramsoc.2009.09.003

[4] Xuejun Zheng, Jiangyu Li, Yichun Zhou. X-ray diffraction measurement of residual stress in PZT thin films prepared by pulsed laser deposition, Acta Materialia.52 (2004) 3313–3322.

DOI: 10.1016/j.actamat.2004.02.047

[5] Y.C. Zhou, Z.Y. Yang, X.J. Zheng. Residual stress in PZT thin films prepared by pulsed laser deposition, Surface and Coatings Technology. 162 (2003) 202–211.

DOI: 10.1016/s0257-8972(02)00581-9

[6] Y.H. Yu a, M.O. Lai a, L. Lua, et al. Measurement of residual stress of PZT thin film on Si(1 0 0) by synchrotron X-ray rocking curve technique, Journal of Alloys and Compounds. 449 (2008) 56–59.

DOI: 10.1016/j.jallcom.2006.02.109

[7] Shengbo Lu, Changming Zuo, Huizhong Zeng. Residual stress and structure characteristics in PZT ferroelectric thin films annealed at different ramp rates, Materials Letters. 60 (2006) 255–260.

DOI: 10.1016/j.matlet.2005.08.040

[8] Qingren Wu, Tonggen Xi, Ziyun Wen. An investigation into the thermophysical properties and phase transitions of new ferroelectric ceramic material PZT, Journal of South China University of Technology (Natural Science Edition). 28(12) ( 2000) 54-58.