Growth of AlN Films on Silicon Substrates by Radio Frequency Magnetron Sputtering

Abstract:

Polycrystalline aluminum nitride (AlN) films were deposited on Si (111) substrates by radio frequency (RF) magnetron sputtering method in an nitrogen (N₂) + argon (Ar) gas mixture. The effect of the preparation conditions- sputtering pressure (p), sputtering power (w), gas mixture (Ar/N₂) and post-deposition annealing treatment -on the properties of AlN films were investigated by means of X-ray diffraction (XRD). Highly c-axis oriented AlN films were obtained with optimized growth parameters: p=0.3Pa, w=400w and Ar/N₂=2.

• Periodical: Key Engineering Materials (Volumes 602-603)
• Pages: 574-577
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.602-603.574
• Online since: March 2014
• Authors: Jian Huang*, Ke Tang, Hui Min Yang, Mei Ai Lin, Lei Zhang, Bing Ren, Hai Tao Xu, Lin Jun Wang
• Keywords: Aluminum Nitride (AlN), Film, Radio Frequency Magnetron Sputtering

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