Intermediate Layer Bonding for Silicon and Piezoelectric on UV Adhesive

Xuan Yang Wang; Huan Liu; Rui Lei; Wei Guo Liu

doi:10.4028/www.scientific.net/KEM.645-646.86

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 645-646Intermediate Layer Bonding for Silicon and...

Intermediate Layer Bonding for Silicon and Piezoelectric on UV Adhesive

Abstract:

During making the surface acoustic wave devices and integrated circuit hybrid integrated electronics, it needs to put the piezoelectric crystal and silicon wafer bonding together. By selecting a certain wavelengths of UV curing adhesive, then exposing with 300-436nm wavelength of exposure machine, 8mm×8mm bonding chips are got. Bonding LiNbO3, quartz and silicon wafer respectively, measured maximum shear force is 116.2 N and 117.9 N with shear force test machine. The fracture energy is 5.831 J/m² measured by crack-opening method test LiNbO3 bonding chips. The results show that piezoelectric crystal and silicon wafer bonding interface level off and the bonding of the middle layer thickness for about 3 microns observed the bonding section with SEM.

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Periodical:

Key Engineering Materials (Volumes 645-646)

Pages:

86-91

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.645-646.86

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Online since:

May 2015

Authors:

Xuan Yang Wang, Huan Liu, Rui Lei, Wei Guo Liu*

Keywords:

Piezoelectric, UV Adhesive, Wafer Bonding

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* - Corresponding Author

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