TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Min Zhong; Yu Hang Zhao; Shou Mian Chen; Ming Li; Shao Hai Zeng; Wei Zhang

doi:10.4028/www.scientific.net/KEM.645-646.70

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TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 645-646TCAD Study of the Raised SiGe Source/Drain in 40nm...

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Abstract:

An embedded SiGe layer was applied in the source/drain areas (S/D) of a field-effect transistor to boost the performance in the p channels. Raised SiGe S/D plays a critical role in strain engineering. In this study, the relationship between the SiGe overfilling and the enhancement of channel stress was investigated. Systematic technology computer aided design (TCAD) simulations of the SiGe overfill height in a 40 nm PMOS were performed. The simulation results indicate that a moderate SiGe overfilling induces the highest stress in the channel. Corresponding epitaxial growth experiments were done and the obtained experimental data was in good agreement with the simulation results. The effect of the SiGe overfilling is briefly discussed. The results and conclusions presented within this paper might serve as useful references for the optimization of the embedded SiGe stressor for 40 nm logic technology node and beyond.