W-Band Quadrupler Based on Multi-Chip Module and Schottky Barrier Diodes

Abstract:

This paper reports a W-band solid-state quadrupler based on multi-chip module and nonlinear schottky barrier diodes. The quadruple consists of Q-band doubler and amplifier, branched-guide coupler and two parallel W-band doublers that are power-combined in-phase using T-juntion at output waveguide, and each W-band doubler channel includes two schottky barrier diodes featuring two anodes on a 127um-thick quartz substrate. The power-combined strategy decreases the size of W-band quadrupler to 56mm×33mm×20mm and increases the maximum stable output power by twice with regard to the traditional W-band doubler. The measured output power of the quadrupler is greater than 20mW over the 80 to 90 GHz and 40mW within 80.6 to 86.6 GHz with above 12% 3dB bandwidth when driven with 2mW input power at 300K. The spectrum of output signal is tested and analyzed to obtain the purity and noise performance of signal.

• Periodical: Key Engineering Materials (Volumes 645-646)
• Pages: 80-85
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.645-646.80
• Online since: May 2015
• Authors: Yue He, Xian Jin Deng, Cheng Wang, Bin Lu*
• Keywords: Frequency Quadrupler, Millimeter Wave, Power-Combining, Schottky Diode

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