Morphological Studies on Spray Deposited Lanthanum Sulphide (La₂S₃) Thin Films

Abstract:

The spray pyrolysis was employed to prepare Lanthanum Sulphide (La₂S₃) thin films on silicon non conducting glass substrate using lanthanum chloride and thioacetamide from aqueous medium. The effect of preparative parameters on film properties was studied. Further thin films characterization was carried out by electrical resistivity, thermoemf, optical, XRD and SEM measurement techniques. The electrical resistivity was the order of 10⁴ – 10⁵ Ω cm and it shows semiconducting behavior. The Thermoemf studies reveal that Lanthanum Sulphide material is P-type. The direct band gap of Lanthanum Sulphide (La₂S₃) thin films was estimated to be 2.5 eV. The XRD studies indicate that Lanthanum Sulphide (La₂S₃) thin films are polycrystalline. A morphological study shows that the Lanthanum Sulphide (La₂S₃) thin films have fibrous network.

• Periodical: Key Engineering Materials (Volume 705)
• Pages: 283-288
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.705.283
• Online since: August 2016
• Authors: Govind Bagde*, C.T. Londhe, A.G. Bagde
• Keywords: Lanthanum Sulphide, Scanning Electron Microscopy, Spray Pyrolysis

References

[1] G. J. McCarthy and J. Rhyne, The rare earth in modern science and technology, Plenum, New York, (1998).

[2] A. Nishino, Capacitors: operating principles, current market and technical trends, J. Power Sources 60 (1996) 137-147.

DOI: 10.1016/s0378-7753(96)80003-6

[3] R. Kotz, M. Carlen, Principles and applications of electrochemical capacitors, Electrochim. Acta 45 (2000) 2483-2498.

DOI: 10.1016/s0013-4686(00)00354-6

[4] E. Frackowiak, E. Beguin, Carbon materials for the electrochemical storage of energy in capacitors, Carbon 39 (2001) 937-950.

DOI: 10.1016/s0008-6223(00)00183-4

[5] K. Westerholt, H. Bach, Wendemuth & S. Methfessel, Superconducting La3-xS4 compounds, J. Phys, 10(F)(1980) 2459-2469.

DOI: 10.1088/0305-4608/10/11/018

[6] K. Westerholt, F. Timmer & H. Bach, Structural phase transition and superconducting properties of Th3P4-type La chalcogenides, Phys Rev, B 32 (1985) 2985-2992.

[7] D. D. Berkley, J. H. Kang, J. Maps, J. C. Wan & A. M. Goldman, Thin solid Films, 156 (1988) 271-275.

[8] H. N. McCoy, J Am Chem Soc, 63 (1941) 1662.

[9] L. R. Yntema, J Am Chem Soc, 52 (1930) 2782.

[10] L. F. Audrieth, E. E. Jukkola, R. E. Meonts & B. S. Hopkins, J Am Chem, Soc, 53 (1931) 1805.

[11] R. W. Ball & L. F. Ynteme, J Am Chem Soc, 52 (1930) 4264.

[12] C. D. Lokhande, M. S. Jadhav and S. H. Pawar, Electrodeposition of Lanthanum from aqueous Bath, Metal Finishing, Nov (1988) 93-98.

[13] L. Tian, T. Ouyang, K. Loh, J. Jagadese, La2S3 thin films from metal organic chemical vapor deposition  of single-source precursor, J. Mater. Chem. 16 (2006) 272-277.

DOI: 10.1039/b511981b

[14] A. A. Mostovskii, L. G. Timofeev and O. A. Timofeev, Sov. Phys. Solid State, 6 (1964) 389-92.

[15] C. D. Lokhande, Chemical deposition of metal sulfide thin films and their characterization, Mater Chem Phys, 28 (1991) 145-149.

[16] X –ray JCPDS data file reference No. 25-1041.

[17] X –ray JCPDS data file reference No. 21-459.

[18] X –ray JCPDS data file reference No. 22-645.

[19] J. D. Desai and C. D. Lokhande, A chemical deposition of Bi2S3 films from acidic bath, Ind. J. Pure Appl. Phys 31 (1993) 152-155.

[20] J. D. Desai, C. D. Lokhande, Non-aquous chemical bath deposition of Bi2S3 thin films Mater. Chem. Phys 34 (1993) 313 -316.

DOI: 10.1016/0254-0584(93)90054-p

[21] T. S. Moss, Optical properties of Semiconductor, Butterworth's Scientific Publication LTD, London, (1959).