Influence of Doping Element Crystal Structure on the Microstructure of Cr Films by Magnetron Sputtering

Abstract:

Cr films with different doping elements were deposited onto silicon wafer by magnetron sputtering. The microstructure and preferred orientation of Cr films were analyzed by TEM and XRD. The results show that the doping element W with bcc structure can strongly inhibit preferred orientation growth trend along (110) crystal plane of Cr film. A nano-multilayer structure is easily formed in the film, which is composed of Cr and W single layer. The doping element Al with fcc structure can strongly inhibit preferred orientation growth trend along all crystal planes of Cr film. The average grain size of Al (Ce) doped Cr film decreased significantly and the crystallization degree improved with the rare earth element Ce added. Both the doping element Zn with hcp structure and the doping element C with hexagonal structure can inhibit preferred orientation growth trend along (110) crystal plane of Cr film. The mechanism is to form the replacement solid solution and interstitial solid solution with Cr atoms, respectively. Nano-multilayer structure composed of Cr and Zn (or C) single layer formed in the films.

• Periodical: Key Engineering Materials (Volume 723)
• Pages: 464-469
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.723.464
• Online since: December 2016
• Authors: Di Chun Chen*, Hongtao Li, Hui Gong, Xiao Ping Wang, Jing Hua Yao
• Keywords: Cr Films, Doping Element, Magnetron Sputtering, Microstructure

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