Fabrication Processes of SOI Structure for Optical Nonreciprocal Devices

Salinee Choowitsakunlert; Kenji Takagiwa; Takuya Kobashigawa; Nariaki Hosoya; Rardchawadee Silapunt; Hideki Yokoi

doi:10.4028/www.scientific.net/KEM.777.107

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 777Fabrication Processes of SOI Structure for Optical...

Fabrication Processes of SOI Structure for Optical Nonreciprocal Devices

Abstract:

Fabrication processes of a magneto-optic waveguide with a Si guiding layer for an optical isolator employing a nonreciprocal guided-radiation mode conversion are investigated. The optical isolator is constructed on a silicon-on-insulator (SOI) structure. The magneto-optic waveguide is fabricated by bonding the Si guiding layer with a cerium-substituted yttrium iron garnet (Ce:YIG). The relationship of waveguide geometric parameters is determined at a wavelength of 1550 nm. The results show that larger tolerance for isolator operation can be obtained at smaller gaps between Si and Ce:YIG. Bonding processes including photosensitive adhesive bonding and surface activated bonding are then compared. It is found that the surface activated bonding process is easier to control and more promising than the photosensitive adhesive bonding.

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Advanced Materials and Engineering Materials VII

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Periodical:

Key Engineering Materials (Volume 777)

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107-112

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.777.107

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Online since:

August 2018

Authors:

Salinee Choowitsakunlert, Kenji Takagiwa, Takuya Kobashigawa, Nariaki Hosoya, Rardchawadee Silapunt, Hideki Yokoi

Keywords:

Photosensitive Adhesive Bonding, Silicon-on-Insulator (SOI), Surface Activated Bonding

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