Improved TiN Deposition on the SKD11 with Equally Spaced Multi-Sources of Cathode Arc

Un Hak Hwang

doi:10.4028/www.scientific.net/KEM.777.132

Paper Titles

Fabrication Processes of SOI Structure for Optical Nonreciprocal Devices
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All Solution-Processed Quintuple-Layer Organic Light-Emitting Diodes Containing Organic-Inorganic Hybrid Active Layers Fabricated by Sol-Gel Method
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Optical Properties and Carrier Transport in a Biased GaAs/AlAs Asymmetric Quintuple-Quantum-Well Superlattice
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Crack Reduction in Tabbing and Stringing Processes for Solar Cells
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Improved TiN Deposition on the SKD11 with Equally Spaced Multi-Sources of Cathode Arc
p.132

Analysis of Junction Temperature of AlGaInP LED
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Collection of Silicone Nanoparticles in Ingot Growing Process and Analysis of Particle Characteristics
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Research Progress of Preparation Technology of Nano Copper Powder for 3D Printing
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Printed PZT Thick Films Implemented for Functionalized Gas Sensors
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 777Improved TiN Deposition on the SKD11 with Equally...

Improved TiN Deposition on the SKD11 with Equally Spaced Multi-Sources of Cathode Arc

Abstract:

The Multi-Sources of Cathode Arc (MSCA) were installed in the vacuum chamber in order to increase the substrate temperature and to provide a plenty of Ti plasmas from titanium plate inside the chamber. The increase rate of the substrate temperature of the SKD11 substrate against the deposition time for two thicknesses of the substrate by operations with both single ion source and MSCA was obtained. It was known that MSCA were useful for the film synthesis for the larger substrate both in size and in number. A wider diffusion interface between TiN film and SKD11 substrate was formed by dissolution of both TiN and Ti₂N into the substrate more actively due to plenty Ti ion numbers supplied by MSCA. Due to the thick diffusion interface the adhesion of the film increased and thus the hardness increased up to twice. The peaks of Ti₂N(111) and Ti₂N(211) which are indicators of high hardness were observed in XRD pattern. The pseudo-diffusion interface between the outer TiN film and substrate formed and it improved the film adhesion. By using MSCA the hardness of SKD11 surface was improved up to 126 from 58 in Rockwell-C scale by the TiN deposition in this study.