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HomeKey Engineering MaterialsKey Engineering Materials Vol. 777Analysis of Junction Temperature of AlGaInP LED

Analysis of Junction Temperature of AlGaInP LED

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Abstract:

Based on the material properties of AlGaInP LED, this paper proposes an approach for predicting the junction temperature. The junction temperature of AlGaInP LED predicted from this study agrees with the available experimental data. The junction temperature increases with increasing the injection current and substrate thickness of LED.

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Advanced Materials and Engineering Materials VII

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Periodical:

Key Engineering Materials (Volume 777)

Pages:

138-142

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.777.138

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Online since:

August 2018

Authors:

Song Feng Wan, Ching Yen Ho*, Yong Gang Chen, Qing Bin Li, Fa Fen Yao

Keywords:

AlGaInP, LED, Temperature

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

[1] K.C. Yung, H. Liem, H.S Choy, Z.X. Cai, Thermal investigation of a high brightness LED array package assembly for various placement algorithm, Applied Thermal Engineering 63 (2014) 105-118.

DOI: 10.1016/j.applthermaleng.2013.11.009

[2] E. Ozuturk, Voltage-current characteristic of LED according to some optical and thermal parameters at pulsed high currents, Optik-International Journal for Light and Electron Optics 126 (2015) 3215-3217.

DOI: 10.1016/j.ijleo.2015.07.147

[3] R. Feng, G. Jie, X. Hao, Determining the junction temperature of GaN-based blue LED with the double spectral parameter, Journal Optoelectronics·Laser 26 (2015) 2083-2088.

[4] Y. Xi, E.F. Schubert, Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method, International Journal of High Speed Electronics & Systems14 (2004) 708-713.

DOI: 10.1142/s0129156404002715

[5] Y. Xi, J.Q. Xi, Th. Gessmann, J. M. Shah, J. K. Kim, E. F. Schubert, A. J. Fischer, M. H. Crawford, K.H.A. Bogart, A.A. Allerman, Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods, Appl. Phys. Lett. 86 (2005).

DOI: 10.1063/1.1849838

[6] H. Eugene, N. Nadarajah, A method for projecting useful life of LED lighting systems. Proc. Soc. Photo-Opt. Inst. Eng. 5187 (2004) 93-99.

[7] J. Hu, L. Yang, M.W. Shin, Mechanism and thermal effect of delamination in light-emitting diode packages, Microelectronics Journal 38 (2007) 148-154.

DOI: 10.1016/j.mejo.2006.08.001

[8] J. Han, J. Li, J. Deng, High bright AlGaInP red light LED, Journal Optoelectronics·Laser 19 (2008) 171-173.

[9] S. Li, W. Xia , D. Ma, Analysis on PIN type LED reverse breakdown characteristics. Journal Optoelectronics·Laser 17 (2006) 506-508.

[10] Y.J. Lee, C.J. Lee,.C.H. Chen, Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes, IEEE Journal of Quantum Electronics 46 (2010) 1450-1455.

DOI: 10.1109/jqe.2010.2050866

[11] Y. Xi, Th. Gessmann, J.Q. Xi, J.K. Kim, J.M. Shah, E.F. Schubert, A.J. Fischer, M.H. Crawford, K.H. A.Bogart, A.A. Allerman, Junction temperature in ultraviolet light-emitting diodes, Japanese Journal of Applied Physics 44 (2005)7260-7266.

DOI: 10.1143/jjap.44.7260

[12] B.C. Chen, K.H. Chen, J.W. Yu, C.Y. Ho, M.Y. Wen, Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes, Optical & Quantum Electronics 49 (2017) 183-193.

DOI: 10.1007/s11082-017-1015-6

[13] S. Adachi, Lattice thermal conductivity of group-IV and III–V semiconductor alloys, Journal of Applied Physics 102 (2007) 063502.

DOI: 10.1063/1.2779259

[14] A.J. Fischer, A.A. Allerman, M.H. Crawford, K.H.A. Bogart, S.R. Lee, R.J. Kaplar, W.W. Chow, S.R. Kurtz, K.W. Fullmer, J.J. Figiel, Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels, Applied Physics Letters 84 (2004).

DOI: 10.1063/1.1728307

[15] H.K. Lee, D.H. Lee Y.M. Song, , Y.T. Lee, J.S. Yu, Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses, Solid State Electronics 56 (2011) 79-84.

DOI: 10.1016/j.sse.2010.10.007