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HomeKey Engineering MaterialsKey Engineering Materials Vol. 806Influence of Etching Regimes on the Reflectance of...

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

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Abstract:

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

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Periodical:

Key Engineering Materials (Volume 806)

Pages:

24-29

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.806.24

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Online since:

June 2019

Authors:

Olga V. Volovlikova*, S.A. Gavrilov, P.I. Lazarenko, A.V. Kukin, A.A. Dudin, A.K. Tarhanov

Keywords:

Black Silicon, Low Reflectance, Ni-Assisted Chemical Etching, Scanning Electron Microscopy, UV-Vis-NIR Spectroscopy

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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