The Effect of Surface on Conductivity of PbSnTe:In/BaF2 Topological Crystalline Insulator in Space Charge Limited Current Regimes

Alexey Nikolaevich Akimov; Evgenij Vladimirovich Fedosenko; Alexandr Eduardovich Klimov; Denis Vyacheslavovich Ishchenko; Nikolay Sergeevich Paschin; Oleg Evgenievich Tereshchenko; Valentina Nikolaevna Sherstyakova

doi:10.4028/www.scientific.net/KEM.806.3

Paper Titles

The Effect of Surface on Conductivity of PbSnTe:In/BaF₂ Topological Crystalline Insulator in Space Charge Limited Current Regimes
p.3

Theoretical Investigation of NiI₂ Based Bilayer Heterostructures
p.10

Chaotic Potential on the Degenerated Semiconductor Surface
p.17

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching
p.24

An Influence of the Si(111)3-4^o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi₂ Nanorods and their Crystal Parameters
p.30

Ordering Сharacteristics of Titanium Dioxide Nanotubes in Anodic Coatings
p.39

Strength Determination Based on the Results of Modeling the Crack Propagation in a Nanostructured Hard Alloy
p.45

Plasma Electrolytic Formation of WO₃-CuO or WO₃-CuWO₄ Oxide Layers on Titanium
p.51

HomeKey Engineering MaterialsKey Engineering Materials Vol. 806The Effect of Surface on Conductivity of...

The Effect of Surface on Conductivity of PbSnTe:In/BaF₂ Topological Crystalline Insulator in Space Charge Limited Current Regimes

Abstract:

The effect of surface chemical treatment on current-voltage (IV) characteristics of high-resistance MBE-grown PbSnTe:In films in space charge limited current (SCLC) regimes has been studied. At T=4.2 K depending on surface chemical treatment the current in films in SCLC regimes under no illumination could rise up to 10⁴ times and even more. The surface chemical treatment also affected both the value and behavior of the photocurrent. The qualitative model for the observed phenomena has been discussed.

You might also be interested in these eBooks

Physics and Technology of Nanostructured Materials IV (Supplement Book)

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 806)

Pages:

3-9

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.806.3

Citation:

Cite this paper

Online since:

June 2019

Authors:

Alexey Nikolaevich Akimov, Evgenij Vladimirovich Fedosenko, Alexandr Eduardovich Klimov, Denis Vyacheslavovich Ishchenko*, Nikolay Sergeevich Paschin, Oleg Evgenievich Tereshchenko, Valentina Nikolaevna Sherstyakova

Keywords:

Lead-Tin-Telluride, Narrow Bandgap, Topological Crystalline Insulator

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S. Safaei, P. Kacman, R. Buczko, Topological crystalline insulator (Pb,Sn)Te: Surface states and their spin polarization, Phys. Rev. B 88 (2013) 045305-1-045305-7.

DOI: 10.1103/physrevb.88.045305

Google Scholar

[2] X. Qian, L. Fu, J. Li., Topological crystalline insulator nanomembrane with strain-tunable band gap Nano Research. 8 (2015) 967-979.

DOI: 10.1007/s12274-014-0578-9

Google Scholar

[3] T. Liang, S. Kushwaha, J. Kim, Q. Gibson, J. Lin, N. Kioussis, R. J. Cava, N. Ph. Ong, A pressure-induced topological phase with large Berry curvature in Pb1−xSnxTe, Sci. Adv. 3 (2017) e1602510.

DOI: 10.1126/sciadv.1602510

Google Scholar

[4] B.M. Vul, I.D. Voronova, G.A. Kalyuzhnaya, T.S. Mamedov, T.Sh.Ragimova, Characteristics of transfer phenomena in Pb0.78Sn0.22 Te with a large indium content, JETP Letters. 29 (1979) 18-22.

Google Scholar

[5] E.V. Fedosenko, A.E. Klimov, D.V. Krivopalov, I.G. Neizvestny, N.I. Petikov, M.A. Torlin, V.N. Shumsky, Surface LTT - film structure with In doping, Appl. Surf. Sci. 78 (1994) 413-420.

DOI: 10.1016/0169-4332(94)90065-5

Google Scholar

[6] A. E. Klimov, V. N. Shumsky, Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectric, Phys. B: Condens. Matter. 404 (2009) 5028-5031.

DOI: 10.1016/j.physb.2009.08.208

Google Scholar

[7] A.E. Klimov, V.S. Epov, Giant Magnetoresistance of PbSnTe:In Films in the Space-Charge-Limited Current Regime: Angular Features and Effect of the Surface, JETP Letters. 106 (2017) 446-453.

DOI: 10.1134/s0021364017190092

Google Scholar

[8] A.K. Kaveev, N.S. Sokolov, S.M. Suturin, N.S. Zhiltsov, A.E. Klimov, O.E. Tereshchenko, Studies of CoFeB crystalline structure grown on PbSnTe topological insulator substrate. http://arxiv.org/abs/1712.01585 (2017).

Google Scholar

[9] Xi Zhang, Tianlei Wang, Wencong Chen, Sanmei Wang, Da Peng, Edge-Corrected Mean-Field Hubbard Model: Principle and Applications in 2D Materials, Frontiers in Physics, 5 (2017) 1-14.

DOI: 10.3389/fphy.2017.00013

Google Scholar

[10] R. L. Petritz, Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface, Phys. Rev., 70(1958) 1254-1262.

DOI: 10.1103/physrev.110.1254

Google Scholar