Registration of an ICP Plasma CV Dependences under Various Pressures in the Plasma-Chemical Deep Etching System

Gleb A. Iankevich

doi:10.4028/www.scientific.net/KEM.822.587

Paper Titles

Investigation of Functional Graded Steel Parts Produced by Selective Laser Melting
p.563

Evolution of the Lattice Structures Properties Manufactured by Selective Laser Melting and Subsequent Hot Isostatic Pressing
p.569

Selective Laser Melting of Nanocomposite Ti-6Al-4V and TiC Powder
p.575

Control of Deviations in Lattice Structures Manufactured by Selective Laser Melting
p.580

Registration of an ICP Plasma CV Dependences under Various Pressures in the Plasma-Chemical Deep Etching System
p.587

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching
p.594

Microstructure and Mechanical Properties of Powder Steel 16Cr - 2Ni - Mn - Mo Obtained by Mechanical Alloying and Spark Plasma Sintering
p.601

Design of Special Device for the Forced Electrolytic-Plasma Polishing of Internal Surfaces by Counter Flows
p.610

Effect of the Mechanical Alloying and Spark Plasma Sintering on Microstructure, Phase Composition and Chemical Elements Distribution of Nb-Si Based Composite
p.617

HomeKey Engineering MaterialsKey Engineering Materials Vol. 822Registration of an ICP Plasma CV Dependences under...

Registration of an ICP Plasma CV Dependences under Various Pressures in the Plasma-Chemical Deep Etching System

Abstract:

The Langmuir probe plasma parameters diagnostics method was studied based on the ICP plasma chemical processing system. Single Langmuir probe with high-frequency compensation system and the special electrical circuit was designed and constructed. CV dependences in various working pressures were registered.

You might also be interested in these eBooks

New Materials and Technologies in Mechanical Engineering

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 822)

Pages:

587-593

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.822.587

Citation:

Cite this paper

Online since:

September 2019

Authors:

Gleb A. Iankevich*

Keywords:

Langmuir Probe, Plasma CV Dependences, Plasma-Chemical Deep Etching

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S.E. Alexandrov, K.S. Tyurikov, D.A. Kirilenko, A.V. Redkov, A.A. Lipovskii, Low-Temperature Atmospheric Pressure Plasma-Enhanced CVD of Nanocomposite Coatings Molybdenum Disulfide (Filler)–Silicon Oxide (Matrix),, Advanced Materials Interfaces. 4 (2017) 1700241.

DOI: 10.1002/admi.201700241

Google Scholar

[2] S.E. Alexandrov, K.S. Tyurikov, A.D. Breki, Low-Temperature Plasma-Chemical Deposition of Nanocomposite Antifriction Molybdenum Disulfide (Filler)–Silicon Oxide (Matrix) Coatings, Russ J Appl Chem. 90 (2017) 1753–1759.

DOI: 10.1134/s1070427217110040

Google Scholar

[3] J. Hopwood, Review of inductively coupled plasmas for plasma processing, Plasma Sources Sci. Technol. 1 (1992) 109.

DOI: 10.1088/0963-0252/1/2/006

Google Scholar

[4] A. Belkind, S. Gershman, Plasma Cleaning of Surfaces, (2008) 11.

Google Scholar

[5] P.K. Chu, J.Y. Chen, L.P. Wang, N. Huang, Plasma-surface modification of biomaterials, Materials Science and Engineering: R: Reports. 36 (2002) 143–206.

Google Scholar

[6] S.E. Alexandrov, A.A. Lipovskii, A.A. Osipov, I.V. Reduto, D.K. Tagantsev, Plasma-etching of 2D-poled glasses: A route to dry lithography, Appl. Phys. Lett. 111 (2017) 111604.

DOI: 10.1063/1.4994082

Google Scholar

[7] M.V. Mishin, V.S. Protopopova, A.A. Uvarov, S.E. Alexandrov, Spatial distribution of the electrical potential and ion concentration in the downstream area of atmospheric pressure remote plasma, AIP Advances. 4 (2014) 107130.

DOI: 10.1063/1.4898785

Google Scholar

[8] H. Amemiya, Probe Diagnostics in Negative Ion Containing Plasma, J. Phys. Soc. Jpn. 57 (1988) 887–902.

DOI: 10.1143/jpsj.57.887

Google Scholar

[9] R.M. Clements, Plasma diagnostics with electric probes, Journal of Vacuum Science and Technology. 15 (1978) 193–198.

DOI: 10.1116/1.569453

Google Scholar

[10] F.F. Chen, Langmuir Probe Diagnostics, (n.d.) 42.

Google Scholar

[11] B. Lipschultz, I. Hutchinson, B. LaBombard, A. Wan, Electric probes in plasmas, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4 (1986) 1810–1816.

DOI: 10.1116/1.573945

Google Scholar

[12] A.A. Osipov, S.E. Alexandrov, A.A. Osipov, Optimization of technological parameters in plasma chemical etching of quartz single crystals, Russian Journal of Applied Chemistry. 89 (2016) 865–870.

DOI: 10.1134/s1070427216060033

Google Scholar

[13] A.A. Osipov, S.E. Aleksandrov, A.A. Osipov, V.I. Berezenko, Development of Process for Fast Plasma-Chemical Through Etching of Single-Crystal Quartz in SF6/O2 Gas Mixture, Russ J Appl Chem. 91 (2018) 1255–1261.

DOI: 10.1134/s1070427218080025

Google Scholar

[14] A.A. Osipov, S.E. Aleksandrov, Yu. V. Solov'ev, A.A. Uvarov, Ar. A. Osipov, Etching of SiC under Low Power Inductively-Coupled Plasma, Russian Microelectronics. 48 (2019) 27-33.

DOI: 10.1134/s1063739719010074

Google Scholar