Ionizers as Major ESD Countermeasure in 12nm Gate Oxide Semiconductor Manufacturing

Abstract:

The sensitive Electrostatic Discharge (ESD) has been found to be the major causes in semiconductor manufacturing that contributed in the event when the samples did not function properly and failed during testing. Various techniques had been studied and implemented as the ESD countermeasures. Based on the EDS event model, control measures on people, grounding and ionizations have been practiced as the main preventive measures against ESD. However, many aspects of the measures need to be customized to the specific fabrication areas. This paper conducted several experiments in the use of ionizers to tackle the ESD issue in a 12nm Gate Oxide semiconductor fabrication facility. Based on several hypotheses on the areas and operations that are prone to ESD during the back-end processes, experiments were conducted to evaluate them. The results affirm the need to individually and specifically check the effectiveness of the usage of ionizers to combat ESD as some ionizer were found to be not effective at the location or area where they are installed.

• Periodical: Key Engineering Materials (Volume 908)
• Pages: 308-315
• DOI: https://doi.org/10.4028/p-i68anb
• Online since: January 2022
• Authors: Nabilah Fathiah binti Abd Ghani*, Mohammad Zakariya bin Bakhri, Ismail bin Mohamadiah, Khairol Amali bin Ahmad, Shahida Niza Binti Mokhtar Anis
• Keywords: 12nm Gate Oxide Back-End Process, ESD, Ionizer, Semiconductor Manufacturing

References

[1] Fundamentals of Electrostatic Discharge, Part One - An Introduction to ESD, 2013, ESD Association.

[2] K.T. Kaschani and R. Gartner, The Impact of Electrical Overstress on the Design Handling and Application of Integrated Circuits, EOS/ESD Symposium Proceedings, 2011, pp.1-10.

[3] M.N.O. Sadiku and C. M. Akujuobi, Electrostatic Discharge (ESD), IEEE Potentials Journal, December 2003/January 2004, pp.39-41.

DOI: 10.1109/mp.2004.1301247

[4] A. Steinmen, Best Practices For Applying Air Ionization, EOS/ESD Symposium 1995, pp.95-245.

[5] K. Yan, R. Gaertner and S. Lim, An Effective ESD Protection System in the Back End (BE) Semiconductor Manufacturing Facility,  Electrical Overstress/Electrostatic Discharge Symposium, 2001, pp.124-131.

[6] J. Marley, D. Tan and V. Kraz, Controlling ESD damage of ICs at various steps of back-end process,, 2001 Electrical Overstress/Electrostatic Discharge Symposium, pp.119-123.

[7] C. Wang, Causes of ESD on Semiconductor Advancements, Electronics Makers, Januari 18, (2014).

[8] K. Beekmaan, Electrostatic discharge in semicon fabrication: Causes and solutions, Information on https://www.semi.org/en/electrostatic-discharge-semiconconductor-fabrication-causes-and-solutions.

[9] A.J. Steinmen, Preventing Electrostatic Problems in Semiconductor Manufacturing, Compliance Engineering, 2004 Annual Reference Guide, Copyright 2004 Canon Communication LLC.

[10] A. Steinman, Static-Charge – The Invisible Contaminants, Cleanroom Management Forum, Microcontamination 10, no 9 (1992), 46 – 512.

[11] J. Hamlin, Controlling Statis Charge in Cleanrooms, Why Should We?, Semiconductor Fabtech, 6th Ed, Henley Publishing, London, (1996).

[12] SEMI E78-1102, Guide to Assessing and Controlling Electrostatic Discharge (ESD) and Electrostatic Attracttion (ESA) in Semiconductor Equipment, Semiconductor Equipment and Materials International (SEMI), San Jose, CA.

[13] SEMI E129-1103, Guide to Controlling Electrostatic Charge in a Semiconductor Manufacturing Facility, SEMI.