Tellurium Doped p-n Device Fabrication by Thermal Diffusion on GaSb-VDS-Substrate

Abstract:

The III-V compound semiconductors exhibit the advantage of wide bandgap and high electron mobility, making them appropriate for optoelectronics and microelectronics sector. Vertical directional solidification (VDS) is a technique developed to grow the high quality III-V semiconducting bulk crystals. One of the Sb based III-V materials, Gallium Antimonide (GaSb) was grown by VDS. This direct band gap semiconductor was realized as a ρ-type substrate and thermally diffused in vacuum by Tellurium (Te) ions as n-type dopant to fabricate ρ-n junction. Fabrication of successful ρ-n junction was confirmed by its electrical behaviour. It was later subjected to furnace annealing in vacuum at 200°C and 400°C for dopant to compensate deep in crystal geometry. Rectification characteristics of this junction were distinctly sharp for either biasing. It is revealed that rectification was approaching to optimum ideality factor (1-2) after vacuum furnace annealing at higher temperature. This device exhibits an applicability for NIR sensing close to 1.7µm.

• Periodical: Key Engineering Materials (Volume 995)
• Pages: 43-48
• DOI: https://doi.org/10.4028/p-8DGlqX
• Online since: December 2024
• Authors: Anshul Gupta*, Manisha Deshpande, Dattatrey B. Gadkari, Dilip S. Maske
• Keywords: GaSb, I-V Characteristics, Vertical Directional Solidification

References

[1] Jens S. Christensen, Dopant diffusion in Si and SiGe (Doctoral thesis), Stockholm (2004)

[2] Alexandre Myasnikov, Nikolay Nikolaevich Gerasimenko, Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors, Semiconductors and Semimetals 46:257-293 (1997)

DOI: 10.1016/S0080-8784(08)60111-8

[3] D.B. Gadkari, Detached phenomenon: Its influence on the crystals quality of InSb:Te grown by the VDS technique, AIP Conf. Proc. 1512, 856 (2013);

DOI: 10.1063/1.4791308

[4] Anshul Gupta, Manisha Deshpande, Dilip Maske, D B Gadkari., Electrical, Optical, and Structural Stability Over Ten Years for Sb Based III-V Semiconducting Bulk Grown by VDS, ECS Transactions, 107 10663 2022

DOI: 10.1149/10701.10663ecst

[5] Dattatray Gadkari, Advances of the Vertical Directional Solidification Technique for the Growth of High Quality GaSb, Journal of Chemistry and Chemical Engineering Vol. 6(1 .): 65-73

[6] Gandhi et al.,, Solid-State Electronics, Vol. 27. No. 12.pp.1149-1152. 1984

DOI: 10.1016/0038-1101(84)90057-1

[7] D.B. Gadkari, B M Arora., Detached Solidification Influences the Crystalline Quality of GaSb Crystals Grown by Vertical Directional Solidification Technique on the Earth, Transaction of the Materials Research Society of Japan 34[3] 571-574 (2009)

DOI: 10.14723/tmrsj.34.571

[8] İ. Orak, K. Ejderha, E. Sönmez, M. Alanyalıoğlu, A. Turut, The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode, Materials Research Bulletin, Volume 61, 2015, Pages 463-468, https://doi.org/10.1016/j.materresbull. 2014.10.066.

DOI: 10.1016/j.materresbull.2014.10.066

[9] Ryan P. Smith, Introduction to semiconductor processing: Fabrication and characterization of p-n junction silicon solar cell, American Journal of Physics 86, 740 (2018);

DOI: 10.1119/1.5046424

[10] S. T. Picraux (1973) Disorder annealing in III–V semiconductors after ion implantation at low temperatures, Radiation Effects, 17:3-4, 261-267

DOI: 10.1080/00337577308232623

[11] Tong He Zhang, R.G. Elliman, G. Carter, Ion implantation damage in InP, Nuclear Instruments and Methods in Physics Research, Volumes 209–210, Part 2, 1983,Pages 761-766, ISSN 0167-5087.

DOI: 10.1016/0167-5087(83)90880-3

[12] Mohammad Awwad ,Ahmed Hafez , K. A. Sharshar , Annealing of Sputtered InSb Thin Film for III-V Semiconductor Devices Applications, Journal of Engineering Science and Military Technologies 17(17):1-7 (2017)

DOI: 10.21608/ejmtc.2017.21647

[13] Z. Ren et al., Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire IEEE Electron Device Letters, vol. 42, no. 4, pp.549-552, April 2021.

DOI: 10.1109/LED.2021.3061705

[14] Anshul Gupta, Manisha Deepak Joshi Deshpande, Dattatray Gadkari, Dilip Maske, Synthesis of GaSb-VDS thin film by electron beam physical vapour deposition and its electro-optical characterization as prerequisite for p-n device construction, Materials Today: Proceedings 57(2) 2021

DOI: 10.1016/j.matpr.2021.11.511