A Study on NbN Thin Films as Resistive Films Prepared via Reactive Magnetron Sputtering

Ying Chieh Lee; Hau Yang; Huei Jyun Shih

doi:10.4028/p-uaZP6q

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 995A Study on NbN Thin Films as Resistive Films...

A Study on NbN Thin Films as Resistive Films Prepared via Reactive Magnetron Sputtering

Abstract:

The NbN thin films were deposited onto glass and Al₂O₃ substrates using reactive magnetron sputtering, employing a niobium target sputtered with a mixture of Ar and N₂ gases. The investigation focused on the phase structures, microstructures, and electrical properties of the NbN thin films under various deposition powers and annealing temperatures. The results indicated the presence of a face-centered cubic (FCC) crystal structure in the as-deposited films at a power of 125 W. Interestingly, the crystallization phase remained unchanged within an annealing temperature range from room temperature to 500 °C. It was observed that the resistivity of the NbN thin films increased with higher nitrogen content, while the temperature coefficient of resistance (TCR) showed a tendency towards more negative values as the nitrogen content rose. Notably, at a nitrogen content of 9%, the film exhibited the lowest resistivity of 273 μΩ-cm with a TCR of -240 ppm/°C.

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Periodical:

Key Engineering Materials (Volume 995)

Pages:

37-42

DOI:

https://doi.org/10.4028/p-uaZP6q

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Online since:

December 2024

Authors:

Ying Chieh Lee*, Hau Yang, Huei Jyun Shih

Keywords:

NbN Thin Films, Reactive Sputtering, Resistivity, TCR

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* - Corresponding Author

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