Preface
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
p.5
p.5
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
p.14
p.14
Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method
p.20
p.20
Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process
p.26
p.26
Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer
p.32
p.32
Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production
p.37
p.37
Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals
p.44
p.44
Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC
p.51
p.51
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 1004)
Online since:
July 2020
Сopyright:
© 2020 Trans Tech Publications Ltd. All Rights Reserved
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