Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC

Tai Hee Eun; Im Gyu Yeo; Jang Yul Kim; Seung Seok Lee; Han Suk Seo; Myong Chuel Chun; Soon Ku Hong

doi:10.4028/www.scientific.net/MSF.1004.51

Paper Titles

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Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC
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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Investigation on the Threading Dislocations Formed...

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC

Abstract:

We investigated the relation between the nucleation of dislocations and the lattice misfits by nitrogen concentration difference between seed and grown crystal during the initial stage of growth. 4H-SiC single crystals were grown with various nitrogen gas flow rates introduced into the crystal growing chamber under the same temperature and pressure to minimize the effect of thermal stress on the nucleation of dislocations. The nitrogen atomic concentrations of grown crystals depended on the introduced nitrogen gas ratios and they highly increased at the very early stage of growth. The generation of new threading dislocations at the interface also was affected by the nitrogen atomic concentrations differences between seed and grown crystals. Very few generated threading dislocations were observed in low nitrogen atomic concentration samples, however nucleation of threading dislocations at the interface were found in high nitrogen atomic concentrations samples. At initial stages of PVT growth process, the generation of threading dislocations induced by lattice misfits originated from nitrogen concentration difference between seed and grown crystals were investigated and found the appropriate nitrogen gas flow rates and profile at the heating and depressurized stage.

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Materials Science Forum (Volume 1004)

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51-56

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.51

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Online since:

July 2020

Authors:

Tai Hee Eun*, Im Gyu Yeo, Jang Yul Kim, Seung Seok Lee, Han Suk Seo, Myong Chuel Chun, Soon Ku Hong

Keywords:

4H-SiC, Initial Growth, Nitrogen Flow Ratio, Sublimation, Treading Dislocation

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