Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

Hironori Itoh; Taro Enokizono; Takaya Miyase; Tsutomu Hori; Keiji Wada; Hideyuki Doi; Masaki Furumai

doi:10.4028/www.scientific.net/MSF.1004.71

Paper Titles

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals
p.44

Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC
p.51

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
p.57

X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates
p.63

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications
p.71

Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool
p.78

Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool
p.84

Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process
p.91

Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
p.96

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Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

Abstract:

Epitaxial growth of 4H-SiC on 150 mm wafers with the recombination-enhancing buffer layer was studied. In order to accomplish the reduction of basal plane dislocations in the buffer layer to almost free level and assure its quality in production, non-destructive evaluation using photoluminescence method was investigated. Epitaxial wafers of which the buffer layer and the drift layer have more than 99% BPD free area in a 2.6 mm × 2.6 mm block evaluation were realized by optimizing the epitaxial growth conditions. Furthermore, very low surface defects density and excellent thickness and doping uniformity were achieved simultaneously.

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Materials Science Forum (Volume 1004)

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71-77

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.71

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Online since:

July 2020

Authors:

Hironori Itoh*, Taro Enokizono, Takaya Miyase, Tsutomu Hori, Keiji Wada, Hideyuki Doi, Masaki Furumai

Keywords:

Basal Plane Dislocations, Epitaxial Growth, Photoluminescence, Recombination-Enhanced Buffer Layer, Surface Defects

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