Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool

Yoshiaki Daigo; Akio Ishiguro; Shigeaki Ishii; Takehiko Kobayashi; Yoshikazu Moriyama

doi:10.4028/www.scientific.net/MSF.1004.84

Paper Titles

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
p.57

X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates
p.63

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications
p.71

Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool
p.78

Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool
p.84

Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process
p.91

Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
p.96

Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
p.102

Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth
p.113

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Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool

Abstract:

N-type 4H-SiC homo-epitaxial films were grown by high speed wafer rotation vertical CVD tool, and effect of surface C/Si ratios on in-wafer uniformity and lower limit of carrier concentration of the SiC films on 150 mm diameter wafers was investigated. From analysis of in-wafer distribution by mapping of whole wafers, it was found that high in-wafer thickness uniformity was obtained for the films grown both at lower introduced C/Si ratio of about 1.35, which corresponds to surface C/Si ratio is lower than 1.0, and at higher introduced C/Si ratio of about 1.80, which corresponds to surface C/Si ratio is higher than 1.0. However, larger fluctuation of the carrier concentration at wafer edge was observed for the film grown at lower introduced C/Si ratio, compared with the film grown at higher introduced C/Si ratio. Lower fluctuation of the carrier concentration for the film grown at higher introduced C/Si ratio is thought to be due to lower sensitivity of carrier concentration on growth temperature, which is observed for the film grown at surface C/Si ratio higher than 1.0. Also, the film grown at higher introduced C/Si ratio showed longer carrier lifetime with higher uniformity, although the film grown at lower introduced C/Si ratio indicated shorter carrier lifetime with lower uniformity. The mean carrier concentration of the films grown at higher introduced C/Si ratio was reduced by two digits compared with those grown at lower introduced C/Si ratio, and low carrier concentration of 1.7 x 10¹⁴ cm^-3 with high in-wafer uniformity for intentionally doped SiC film grown at higher introduced C/Si ratio was achieved. Based on the results mentioned above, fabrication of thick and low-doped epi layer on 150 mm diameter wafer with high in-wafer uniformity was demonstrated.