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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Corona Assisted Tuning of Gallium Oxide Growth on...

Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

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Abstract:

Gallium oxide was grown on silicon carbide substrates using a corona discharge assisted vapor phase epitaxy process and gold catalyst. It is shown that by implementing the corona discharge the morphology of the gallium oxide can be transformed. The excitation of the gas phase and the generation of excited species directly influence the growth morphology suppressing nanowire growth and supporting the transformation into heteroepitaxial growth.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

102-109

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.102

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Online since:

July 2020

Authors:

Johannes Reiprich, Nishchay Angel Isaac, Leslie Schlag, Marcus Hopfeld, Joerg Pezoldt*, Heiko O. Jacobs

Keywords:

Corona, Gallium Oxide (Ga₂O₃), Nanowires, Plasma, Vapor Liquid Solid, Vapor Phase Epitaxy

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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