Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC

Bart J. Van Zeghbroeck; Ryan Brow; Tomoko Borsa; David Bobela

doi:10.4028/www.scientific.net/MSF.1004.126

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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
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Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth
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3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress
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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC
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Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
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Mono-Versus Poly-Crystalline SiC for Nuclear Applications
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Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations
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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Analysis of Defect-Free Hot Filament CVD-Grown...

Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC

Abstract:

Analysis of hot-filament CVD (HF-CVD) growth of high quality 3C-SiC on micron-sized 3C-SiC mesas is presented. Two types of growth were observed: 1) a relatively slow growth at about 1μm/hour, and 2) an almost three times faster growth, correlated with the presence of domain boundaries in, or adjacent to, the mesas. Both reveal well-defined crystallographic facets and sharp corners between them. The slower growth has been identified to be surface-nucleation-limited, seemingly defect-free, while the faster growth has been identified as being caused by defect-induced step-flow growth. A growth model is presented, yielding a growth rate of 1.18 μm/h for the defect free {111} and (100) plane and 2.8 μm/h for {110} planes.

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Materials Science Forum (Volume 1004)

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126-131

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.126

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Online since:

July 2020

Authors:

Bart J. Van Zeghbroeck*, Ryan Brow, Tomoko Borsa, David Bobela

Keywords:

3C-SiC, APBs, Growth Model, HFCVD, Hot Filament, SEM Imaging, Stacking Faults

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References

[1] M. Shinohara, M. Yamanaka, and H. Daimon, Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition,, Jap. J. of Applied Phys. 27 (1988) L434.

DOI: 10.1143/jjap.27.l434

Google Scholar

[2] G. Ferro, 3C-SiC epitaxial growth on α-SiC polytypes,, in Silicon Carbide Epitaxy, edited by Francesco La Via (ISBN: 978-81-308-0500-9 2012) Chapter 7, pp.213-226.

Google Scholar

[3] Bin Xin, Ren-Xu Jia, Ji-Chao Hu, Cheng-Ying Tsai, Hao-Hsiung Lin, Yu-Ming Zhang, A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD,, Applied Surface Science 357 (2015) 985–993.

DOI: 10.1016/j.apsusc.2015.09.090

Google Scholar

[4] P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang, and M. Dudley, CVD Growth of 3C-SiC on 4H/6H Mesas,, Chem. Vap. Deposition 12 (2006) 531–540.

DOI: 10.1002/cvde.200506460

Google Scholar

[5] T. Kreiliger, M. Mauceri, M. Puglisi, F. Mancarella, F. La Via, D. Crippa, W. Kaplan, A. Schöner, A. Marzegalli, L. Miglio, and H. Kanel, 3C-SiC growth on deeply patterned silicon (111) substrates,, Materials Science Forum 858 (2016) 151.

DOI: 10.4028/www.scientific.net/msf.858.151

Google Scholar

[6] P. Hens, R.R. Brow, H. Robinson, M. Cromar, and B. Van Zeghbroeck, Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition,, Thin Solid Films 635, (2017) 48.

DOI: 10.1016/j.tsf.2017.02.024

Google Scholar

[7] P. Hens, R.R. Brow, H. Robinson, and B. Van Zeghbroeck, Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates,, MRS Advances 2 5 (2017) 289.

DOI: 10.1557/adv.2017.20

Google Scholar