Mono-Versus Poly-Crystalline SiC for Nuclear Applications

Xian Huang; Taguhi Yeghoyan; Stéphane Gavarini; Véronique Soulière; Nathalie Millard-Pinard; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.1004.139

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Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
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Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Mono-Versus Poly-Crystalline SiC for Nuclear...

Mono-Versus Poly-Crystalline SiC for Nuclear Applications

Abstract:

3C-SiC layers of different microstructures (monocrystalline (100) and (111) oriented and polycrystalline) were implanted with high energy (800 keV) ¹²⁹Xe⁺⁺ ions. Implantations were performed at room temperature (RT) and at 500 °C using two different fluences of Φ₁ = 1x10¹⁶ and Φ₂= 1x10¹⁷ at/cm². Surface blistering was only observed for RT and Φ₂ implantations into poly-SiC material while mono-SiC kept rather smooth surface. This was due to more homogeneous Xe bubbles distribution (200 nm deep) in the mono-SiC than in the poly-SiC. Xe retention was found to be almost complete for all samples. Some Xe enhanced diffusion was detected in the poly-SiC material which was attributed to grain boundaries. Some irradiation-induced oxidation effect was evidenced, O element being located at the depth where Xe bubbles are accumulating. This was more pronounced for poly than for mono-SiC. These results demonstrate that SiC microstructure affects many aspects of its behavior upon Xe irradiation.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

139-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.139

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Online since:

July 2020

Authors:

Xian Huang, Taguhi Yeghoyan, Stéphane Gavarini, Véronique Soulière, Nathalie Millard-Pinard, Gabriel Ferro*

Keywords:

3C-SiC, Amorphization, Implantation, Monocrystal, Nuclear, Polycrystal, Xenon

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