Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer

Ryohei Kawasaki; Kenta Irikura; Hitoshi Habuka; Yoshinao Takahashi; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.1004.167

Paper Titles

Mono-Versus Poly-Crystalline SiC for Nuclear Applications
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Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations
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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
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Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size
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Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
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Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
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Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides
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SiC Epitaxial Reactor Cleaning by ClF₃ Gas with the Help of Reaction Heat
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Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Non-Plasma Dry Etcher Design for 200 mm-Diameter...

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer

Abstract:

For improving the productivity of the semiconductor silicon carbide power devices, a very large diameter wafer process was studied, particularly for the non-plasma wafer etching using the chlorine trifluoride gas. Taking into account the motion of heavy gas, such as the chlorine trifluoride gas having the large molecular weight, the transport phenomena in the etching reactor were evaluated and designed using the computational fluid dynamics. The simple gas distributor design for a 200-mm-diameter wafer was evaluated in detail in order to uniformly spread the etchant gas over the wide wafer surface.

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Materials Science Forum (Volume 1004)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.167

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Online since:

July 2020

Authors:

Ryohei Kawasaki, Kenta Irikura, Hitoshi Habuka*, Yoshinao Takahashi, Tomohisa Kato

Keywords:

200 mm Diameter, C-Face SiC, Chlorine Trifluoride Gas, Wafer Etching

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