Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals

A. Titov; A. Walters; Hirokazu Sasai; T. Shindo

doi:10.4028/www.scientific.net/MSF.1004.193

Paper Titles

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
p.167

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
p.173

Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides
p.180

SiC Epitaxial Reactor Cleaning by ClF₃ Gas with the Help of Reaction Heat
p.186

Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals
p.193

A New Permanganate-Free Slurry for GaN-SiC CMP Applications
p.199

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition
p.206

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
p.215

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
p.224

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Cost-Efficient High-Throughput Polishing of...

Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals

Abstract:

Polishing of Silicon Carbide (SiC) seed crystals and substrates to achieve an extremely smooth, level surface, and an optically clear finish takes many surface finishing steps with very long processing times producing a significant amount of slurry waste and utilizing numerous lapping and polishing machines. This paper presents a newly developed cost-efficient SiC polishing process which reduces these operations to two surface finishing steps for achieving an optically clear finish on monocrystalline SiC material where the same size of diamond abrasives for lapping and polishing steps allows to carry out stock removal lapping and polishing processes on a single platform (machine) without concern of cross-contamination and making it as a very cost-efficient and high-throughput polishing process for SiC seed crystals and substrates.

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Silicon Carbide and Related Materials 2019

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

193-198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.193

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Online since:

July 2020

Authors:

A. Titov*, A. Walters, Hirokazu Sasai, T. Shindo

Keywords:

Abrasive Powders, Chemical Mechanical Polishing, Cost-Efficient, Diamond Slurry, Hard-to-Cut, High-Throughput, Lapping, Seed, Silicon Carbide, Surface Finishing Process, Wafer

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References

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