Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides

Ichiro Mizushima; Hitoshi Habuka

doi:10.4028/www.scientific.net/MSF.1004.180

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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Chemical Behavior of Byproduct Layer in Exhaust...

Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides

Abstract:

This study evaluated the chemical behavior of an oily byproduct which was formed in the exhaust tube during the silicon carbide epitaxial growth process using various precursors, such as silanes, chlorosilanes, propane, hydrogen chloride and hydrogen. Most of the precursors were spontaneously emitted from the oily byproduct, when the oily byproduct was kept under a nitrogen gas flow at atmospheric pressure and at room temperature. When the oily byproduct was exposed to 2-5 % chlorine trifluoride gas in ambient nitrogen at room temperature, various gaseous fluorides were produced, accompanying a slight temperature increase.

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Periodical:

Materials Science Forum (Volume 1004)

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180-185

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.180

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Online since:

July 2020

Authors:

Ichiro Mizushima, Hitoshi Habuka*

Keywords:

Chemical Behavior, Oily Byproduct, SiC Epitaxial Reactor

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References

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